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SLR738AV10

Onsemi

SLR738AV10 by Onsemi

SLR738AV10 by Onsemi is an Infrared LED with peak wavelength of 850nm, max forward current of 0.1A, and viewing angle of 13°. Ideal for applications requiring IR illumination in a temp range from -25 °C to 80°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,865 parts In-Stock

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Vyrian

USA . 1,404 parts In-Stock

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TANS Electronics

Latvia . 6,552 parts In-Stock

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SupplyDigital Components

Austria . 5,070 parts In-Stock

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Kulean Microsystems

USA . 3,912 parts In-Stock

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Problanco Electronics

Mexico . 2,968 parts In-Stock

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Corphita

USA . 990 parts In-Stock

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990

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Corohmni

South Africa . 108 parts In-Stock

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Overview

Illuminate your world with the SLR738AV10 by Onsemi, a top-tier manufacturer known for their superior quality products. This Infrared LED offers peak performance at a wavelength of 850nm, making it ideal for applications ranging from security cameras to remote controls. With a maximum forward current of 0.1A and a wide viewing angle of 13°, this LED provides exceptional value and reliability. Experience the benefits of Onsemi's cutting-edge technology with the SLR738AV10, setting the standard for excellence in the industry.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low forward current ensures lower power consumption and helps in extending the LED's lifespan.

Peak Wavelength (nm): 850

The specific peak wavelength of 850 nm makes it suitable for applications where this specific wavelength is required.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature allows for reliable performance in various environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures that the LED can function efficiently even in cold conditions.

Maximum Reverse Voltage: 3 V

The low reverse voltage rating provides protection to the LED against potential reverse voltage incidents.

Viewing Angle: 13°

The narrow viewing angle of 13° allows for focused and directed light output for specific applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easier to securely install the LED on PCBs or other surfaces.

Maximum Forward Voltage: 1.6 V

The low forward voltage drop ensures efficient power conversion and minimizes energy loss.

Technical Specifications

Infrared LEDs SLR738AV10 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.6 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

13 deg

Trade Compliance

SLR738AV10 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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