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SLR732AV30

Onsemi

SLR732AV30 by Onsemi

SLR732AV30 by Onsemi is an Infrared LED with 0.1A max forward current, emitting at 850nm peak wavelength. Operating temp ranges from -25 °C to 80°C. Ideal for applications requiring a viewing angle of 20°, with a max reverse voltage of 3V and through-hole mounting feature.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,704 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 5,312 parts In-Stock

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Problanco Electronics

Mexico . 5,105 parts In-Stock

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Kulean Microsystems

USA . 2,211 parts In-Stock

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TANS Electronics

Latvia . 1,000 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 466 parts In-Stock

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Corohmni

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Overview

Illuminate your world with the SLR732AV30 by Onsemi, a superior quality Infrared LED that offers unmatched performance and reliability. Onsemi, a trusted name in the industry, ensures that this product delivers exceptional results in a variety of applications. From security systems to remote controls, this versatile LED provides value and benefits that exceed expectations. Experience the advantages of its peak wavelength of 850nm, maximum forward current of 0.1A, and wide viewing angle of 20°. Trust Onsemi to light up your projects with the SLR732AV30.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low maximum forward current ensures that the product is energy efficient and has a longer lifespan.

Peak Wavelength (nm): 850

The peak wavelength of 850nm makes it suitable for various applications including remote controls, security systems, and night vision devices.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this product can withstand high temperatures and perform reliably in different environments.

Minimum Operating Temperature: -25 °C

The ability to operate at temperatures as low as -25 °C makes this product suitable for use in cold climates or refrigerated environments.

Maximum Reverse Voltage: 3 V

The maximum reverse voltage of 3V provides protection against reverse polarity and ensures the longevity of the product.

Viewing Angle: 20°

The wide viewing angle of 20° allows for effective dispersion of light and better coverage in applications such as security cameras or motion sensors.

Mounting Feature: THROUGH HOLE MOUNT

The THROUGH HOLE MOUNT feature facilitates easy installation and secure mounting of the product on various surfaces for reliable performance.

Maximum Forward Voltage: 1.7 V

The low maximum forward voltage of 1.7V ensures energy efficiency and helps in reducing power consumption during operation.

Technical Specifications

Infrared LEDs SLR732AV30 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.7 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR732AV30 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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