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SLR738A

Onsemi

SLR738A by Onsemi

SLR738A by Onsemi is an Infrared LED with peak wavelength of 830nm. It has max forward current of 0.1A and can operate b/w -25 °C to 80°C. Ideal for applications requiring through hole mounting and emitting infrared light at a specific wavelength.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,461 parts In-Stock

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Vyrian

USA . 570 parts In-Stock

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SupplyDigital Components

Austria . 8,091 parts In-Stock

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Kulean Microsystems

USA . 6,258 parts In-Stock

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Problanco Electronics

Mexico . 5,183 parts In-Stock

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TANS Electronics

Latvia . 2,558 parts In-Stock

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Corphita

USA . 1,803 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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Corohmni

South Africa . 291 parts In-Stock

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Overview

Illuminate your world with the SLR738A by Onsemi, a high-quality Infrared LED that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this LED is designed to exceed expectations. With a peak wavelength of 830nm and maximum forward current of 0.1A, this LED is perfect for a wide range of applications. Whether you're looking to enhance security systems, improve remote control functionality, or develop cutting-edge medical devices, the SLR738A delivers exceptional value, benefits, and advantages to customers seeking top-notch performance. Turn your vision into reality with Onsemi's SLR738A Infrared LED.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

With a high maximum forward current, this infrared LED is capable of producing bright and consistent light output, making it suitable for applications that require high intensity illumination.

Peak Wavelength (nm): 830

The peak wavelength of 830nm indicates that this infrared LED is optimized for use in applications where this specific wavelength is most effective, ensuring efficient performance.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C allows this infrared LED to withstand elevated temperatures, making it suitable for use in environments where heat generation is a concern.

Minimum Operating Temperature: -25 °C

With a low minimum operating temperature of -25 °C, this infrared LED can function effectively even in cold conditions, making it versatile for various temperature environments.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5V adds a level of protection against reverse polarity, ensuring the longevity and reliability of this infrared LED in different circuit configurations.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this infrared LED provides high efficiency and performance, making it a superior choice for applications requiring energy-efficient lighting solutions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and stable installation of this infrared LED onto circuit boards or other electronic devices, ensuring a reliable connection for long-term use.

Technical Specifications

Infrared LEDs SLR738A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

830

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Sub-Category:

Infrared LEDs

Trade Compliance

SLR738A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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