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SLR732AV50

Onsemi

SLR732AV50 by Onsemi

SLR732AV50 by Onsemi is an Infrared LED with 0.1A max forward current, 850nm peak wavelength, and 20° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -25 °C to 80°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,304 parts In-Stock

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Digiode

USA . 725 parts In-Stock

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Kulean Microsystems

USA . 4,199 parts In-Stock

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SupplyDigital Components

Austria . 3,299 parts In-Stock

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Problanco Electronics

Mexico . 2,538 parts In-Stock

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Corphita

USA . 2,286 parts In-Stock

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TANS Electronics

Latvia . 1,074 parts In-Stock

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Corohmni

South Africa . 224 parts In-Stock

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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Overview

Elevate your infrared LED experience with the Onsemi SLR732AV50. Crafted by a trusted manufacturer, this top-of-the-line component offers unparalleled quality and reliability. Perfect for a wide range of applications, from security cameras to motion sensors, this product boasts a peak wavelength of 850nm and a maximum forward current of 0.1A. With a viewing angle of 20° and a maximum reverse voltage of 3V, the SLR732AV50 is designed to deliver exceptional performance in any environment. Trust in Onsemi to bring you cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low forward current ensures efficient power consumption and longer lifespan of the product.

Peak Wavelength (nm): 850

The peak wavelength of 850 nm is ideal for various infrared applications, providing optimal performance.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this product can withstand a wide range of environmental conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this product to operate in cold environments without any issues.

Maximum Reverse Voltage: 3 V

The maximum reverse voltage of 3 V provides protection against reverse polarity and ensures the durability of the product.

Viewing Angle: 20°

The 20° viewing angle offers a wide coverage area, making this product suitable for various applications that require a broad light dispersion.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy installation and secure placement, enhancing the usability of this product.

Maximum Forward Voltage: 1.5 V

The low maximum forward voltage of 1.5 V ensures efficient power consumption and reliable performance of the product.

Technical Specifications

Infrared LEDs SLR732AV50 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR732AV50 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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