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SLR732AV10

Onsemi

SLR732AV10 by Onsemi

SLR732AV10 by Onsemi is an Infrared LED with 0.1A max forward current, emitting at 850nm peak wavelength. Ideal for applications requiring a viewing angle of 20° and operating temperatures ranging from -25 °C to 80°C. Through-hole mounting feature with a max forward voltage of 1.6V makes it versatile for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,242 parts In-Stock

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Digiode

USA . 579 parts In-Stock

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Problanco Electronics

Mexico . 6,552 parts In-Stock

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Kulean Microsystems

USA . 5,775 parts In-Stock

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TANS Electronics

Latvia . 4,976 parts In-Stock

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UHIMA Technologies

Türkiye . 977 parts In-Stock

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SupplyDigital Components

Austria . 719 parts In-Stock

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Corphita

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Corohmni

South Africa . 192 parts In-Stock

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Overview

Illuminate your world with the SLR732AV10 Infrared LED by Onsemi. Crafted with precision and quality, this powerful component offers peak performance in a compact package. From security systems to medical devices, this versatile LED is perfect for a wide range of applications. Experience the benefits of reliable operation, efficient power consumption, and exceptional durability. Trust Onsemi's reputation for excellence and let the SLR732AV10 light up your projects with unparalleled value and innovation.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

Higher forward current allows for brighter output and better performance.

Peak Wavelength (nm): 850

The peak wavelength of 850nm is ideal for various applications including remote controls, security systems, and medical devices.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures reliable performance even in cold environments.

Maximum Reverse Voltage: 3 V

The low reverse voltage rating protects the LED from damage in case of reverse polarity.

Viewing Angle: 20°

The wide viewing angle of 20° allows for better visibility and coverage in applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature makes it easy to securely attach the LED to a circuit board.

Maximum Forward Voltage: 1.6 V

The low forward voltage drop of 1.6V ensures energy efficiency and reliable operation.

Technical Specifications

Infrared LEDs SLR732AV10 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.6 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR732AV10 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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