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TIL34

Texas Instruments

TIL34 by Texas Instruments

TIL34 by Texas Instruments is an Infrared LED with a peak wavelength of 940nm and max forward current of 0.2A. It operates b/w -60°C to 150°C, has a response time of 0.0000006s, and a viewing angle of 10°. Ideal for applications requiring precise infrared illumination in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,132 parts In-Stock

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Digiode

USA . 1,261 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,534 parts In-Stock

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$0.100

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$0.100

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Parana Technologies

USA . 2,255 parts In-Stock

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$0.410

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$1.592

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$0.410

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DigiPath Technology Company

USA . 1,033 parts In-Stock

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$0.452

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$0.416

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$0.452

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ChromeModa Solutions

Germany . 4,783 parts In-Stock

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$0.461

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$0.378

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IDEA Electronic Components Group

UK . 1,092 parts In-Stock

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$0.461

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$0.415

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1,092

$0.461

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AZTECH Wire

Italy . 254 parts In-Stock

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$8.147

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$8.147

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Semicontronic

India . 1,053 parts In-Stock

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$9.100

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$8.872

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$8.827

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One Stop Electronics

USA . 928 parts In-Stock

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$10.100

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928

$10.100

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Corphita

USA . 934 parts In-Stock

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934

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Corohmni

South Africa . 389 parts In-Stock

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Overview

Illuminate your world with the TIL34 Infrared LED by Texas Instruments, a top-quality product designed for a wide range of applications. Whether you're in need of reliable infrared illumination for security systems, remote controls, or even medical devices, this little powerhouse delivers exceptional performance and durability. With a peak wavelength of 940nm and a fast response time, the TIL34 provides unmatched value and versatility. Trust Texas Instruments to bring you cutting-edge technology that meets your every need.

Feature Benefit Bullets

Maximum Forward Current: 0.2 A

The low maximum forward current requirement ensures efficient power consumption, making this product energy-efficient.

Peak Wavelength (nm): 940

The peak wavelength of 940nm is ideal for applications requiring infrared light emission, such as night vision devices and remote control systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance of 150°C allows for reliable performance in various environments without the risk of overheating.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C ensures that the product can function effectively even in extremely cold conditions.

Maximum Response Time: 0.0000006 s

The extremely fast maximum response time of 0.0000006 seconds allows for quick and precise control in applications that require rapid switching.

Maximum Reverse Voltage: 2 V

The low maximum reverse voltage of 2V protects the LED from potential damage due to reverse current flow, ensuring its longevity.

Semiconductor Material: GaAs

The use of GaAs semiconductor material enhances the efficiency and performance of the LED, making it a reliable choice for various applications.

Viewing Angle: 10°

The narrow viewing angle of 10° provides focused and directional light output, suitable for precise illumination requirements.

Spectral Bandwidth: 50 m

The narrow spectral bandwidth of 50m enables the LED to emit light within a specific range, making it suitable for applications that require precise wavelength control.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure placement of the LED, making it easier to integrate into various electronic devices.

Maximum Forward Voltage: 1.7 V

The low maximum forward voltage requirement of 1.7V ensures efficient power conversion and reduces energy loss, making this LED a cost-effective choice for long-term use.

Technical Specifications

Infrared LEDs TIL34 attributes and parameters. Explore more Infrared LEDs devices from Texas Instruments

Specs

Maximum Forward Current:

.2 A

Maximum Forward Voltage:

1.7 V

Mounting Feature:

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

940

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

2 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

50 m

Sub-Category:

Infrared LEDs

Viewing Angle:

10 deg

Trade Compliance

TIL34 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.A

ECCN Governance

EAR

HTS

8541.40.20.00

SB

8541.40.20.00

NSN

5980-01-076-3811, 5980010763811

NIIN

010763811

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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