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SLR832C

Onsemi

SLR832C by Onsemi

SLR832C by Onsemi is an Infrared LED with peak wavelength of 880nm, forward current of 0.1A, and viewing angle of 30°. Ideal for applications requiring fast response time (6µs), operating temperatures from -25 °C to 80°C, and reverse voltage up to 5V.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,093 parts In-Stock

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Vyrian

USA . 900 parts In-Stock

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Kulean Microsystems

USA . 8,206 parts In-Stock

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SupplyDigital Components

Austria . 8,081 parts In-Stock

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Problanco Electronics

Mexico . 7,887 parts In-Stock

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TANS Electronics

Latvia . 6,039 parts In-Stock

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Corphita

USA . 1,955 parts In-Stock

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UHIMA Technologies

Türkiye . 310 parts In-Stock

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Corohmni

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Overview

Illuminate your world with the SLR832C Infrared LED by Onsemi. Crafted with precision and expertise, this powerful component offers unparalleled quality and reliability. Ideal for a wide range of applications, from security systems to industrial automation, this LED delivers exceptional performance with a peak wavelength of 880nm and quick response time. With a maximum forward voltage of 2V and a viewing angle of 30°, the SLR832C promises to bring value and efficiency to your projects. Trust in Onsemi to light up your innovations.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This high maximum forward current allows for reliable and efficient performance of the Infrared LEDs.

Peak Wavelength (nm): 880

The peak wavelength of 880nm ensures a strong and focused emission of infrared light for various applications.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature, these Infrared LEDs can withstand heat and operate effectively in challenging environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures that these Infrared LEDs can function even in cold conditions without any issues.

Maximum Response Time: 0.0000006 s

The quick response time of 0.0000006 seconds ensures instant activation and accurate performance of the Infrared LEDs.

Maximum Reverse Voltage: 5 V

The low maximum reverse voltage of 5V protects the LED components from damage due to reverse polarity.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material ensures high efficiency and durability of the Infrared LEDs.

Viewing Angle: 30°

The wide viewing angle of 30° allows for a broad coverage area and flexibility in positioning the Infrared LEDs.

Spectral Bandwidth: 65 m

The narrow spectral bandwidth of 65m ensures precise and focused emission of infrared light for specific applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides easy and secure installation of the Infrared LEDs on circuit boards or other surfaces.

Maximum Forward Voltage: 2 V

The low maximum forward voltage of 2V ensures energy efficiency and safe operation of the Infrared LEDs.

Technical Specifications

Infrared LEDs SLR832C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

2 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

880

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

65 m

Sub-Category:

Infrared LEDs

Viewing Angle:

30 deg

Trade Compliance

SLR832C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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