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SLR838C

Onsemi

SLR838C by Onsemi

SLR838C by Onsemi is an Infrared LED with peak wavelength of 880nm, forward current of 0.1A, and response time of 0.0000006s. Ideal for applications requiring a viewing angle of 20°, spectral bandwidth of 65m, and GaAlAs semiconductor material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,167 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,813 parts In-Stock

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SupplyDigital Components

Austria . 6,445 parts In-Stock

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TANS Electronics

Latvia . 5,814 parts In-Stock

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Problanco Electronics

Mexico . 4,179 parts In-Stock

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UHIMA Technologies

Türkiye . 983 parts In-Stock

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Corphita

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Illuminate your world with the SLR838C from Onsemi, a leading manufacturer of high-quality Infrared LEDs. Perfect for applications such as remote control systems, security sensors, and data transmission, this powerful component offers exceptional value and benefits to customers seeking reliable performance and durability. With a peak wavelength of 880nm and a fast response time of just 0.0000006 seconds, the SLR838C delivers outstanding results in a wide range of operating temperatures. Trust Onsemi to provide cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

High maximum forward current ensures efficient power usage and longevity of the product.

Peak Wavelength (nm): 880

Peak wavelength of 880nm is ideal for various infrared applications, such as remote controls and security systems.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this product is suitable for use in a wide range of environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C ensures reliable performance even in cold conditions.

Maximum Response Time: 0.0000006 s

Fast response time of 0.0000006 seconds ensures quick detection and transmission of signals.

Maximum Reverse Voltage: 5 V

Low maximum reverse voltage of 5V protects the product from potential damage due to reverse polarity.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material ensures high efficiency and durability of the product.

Viewing Angle: 20°

Wide viewing angle of 20° enables the LED to cover a larger area effectively.

Spectral Bandwidth: 65 m

The narrow spectral bandwidth of 65m enhances the accuracy and reliability of the transmitted signals.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature facilitates easy and secure installation of the LED in various devices and systems.

Maximum Forward Voltage: 2 V

Low maximum forward voltage requirement of 2V ensures energy efficiency and compatibility with a wide range of power sources.

Technical Specifications

Infrared LEDs SLR838C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

2 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

880

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

65 m

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR838C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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