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SLR835C

Onsemi

SLR835C by Onsemi

SLR835C by Onsemi is an Infrared LED with peak wavelength of 880nm, forward current of 0.1A, and viewing angle of 10°. Ideal for applications requiring fast response time (6ns), it operates b/w -25 °C to 80°C temperature range and has a max reverse voltage of 5V.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

USA . 548 parts In-Stock

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Digiode

USA . 256 parts In-Stock

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Kulean Microsystems

USA . 7,237 parts In-Stock

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Problanco Electronics

Mexico . 4,405 parts In-Stock

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Corphita

USA . 2,241 parts In-Stock

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TANS Electronics

Latvia . 1,800 parts In-Stock

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SupplyDigital Components

Austria . 1,403 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Corohmni

South Africa . 180 parts In-Stock

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Overview

Illuminate your world with the SLR835C by Onsemi. As a leading manufacturer of quality infrared LEDs, Onsemi delivers cutting-edge technology that exceeds industry standards. Perfect for applications such as remote controls, automotive sensors, and security systems, the SLR835C offers unmatched performance and reliability. With a peak wavelength of 880nm and a fast response time of 0.0000006s, this product provides exceptional value and benefits to customers looking for superior infrared LED solutions. Choose Onsemi for unparalleled quality and innovation in every application.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

With a high maximum forward current, this product can handle a significant amount of power, making it suitable for demanding applications.

Peak Wavelength (nm): 880

The peak wavelength of 880 nm makes this product ideal for applications requiring infrared illumination or communication.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C ensures that this product can withstand operating conditions without performance degradation.

Minimum Operating Temperature: -25 °C

With a low minimum operating temperature of -25 °C, this product can operate in a wide range of environments.

Maximum Response Time: 0.0000006 s

The fast maximum response time of 0.0000006 seconds allows this product to quickly react to input signals, making it suitable for time-sensitive applications.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5 volts ensures that this product is protected against reverse polarity, enhancing its reliability.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this product provides high efficiency and reliability, making it a durable choice for long-term use.

Viewing Angle: 10°

With a narrow viewing angle of 10°, this product can provide focused and directional infrared illumination, suitable for specific applications.

Spectral Bandwidth: 65 m

The spectral bandwidth of 65 millimeters makes this product suitable for applications requiring precise control over the wavelength of emitted infrared light.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and ensures secure mounting of this product in electronic devices.

Maximum Forward Voltage: 2 V

With a low maximum forward voltage of 2 volts, this product helps minimize power consumption and heat generation, making it energy-efficient.

Technical Specifications

Infrared LEDs SLR835C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

2 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

880

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

65 m

Sub-Category:

Infrared LEDs

Viewing Angle:

10 deg

Trade Compliance

SLR835C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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