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SLR935A7

Onsemi

SLR935A7 by Onsemi

SLR935A7 by Onsemi is an Infrared LED with peak wavelength of 945nm, forward current of 0.1A, and response time of 0.000001s. Ideal for applications requiring precise IR illumination in a temperature range from -25 °C to 80°C.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 736 parts In-Stock

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Digiode

USA . 684 parts In-Stock

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Kulean Microsystems

USA . 8,284 parts In-Stock

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SupplyDigital Components

Austria . 7,105 parts In-Stock

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TANS Electronics

Latvia . 4,066 parts In-Stock

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Problanco Electronics

Mexico . 4,034 parts In-Stock

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Corphita

USA . 890 parts In-Stock

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Corohmni

South Africa . 364 parts In-Stock

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UHIMA Technologies

Türkiye . 255 parts In-Stock

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Overview

Illuminate your world with the SLR935A7 Infrared LED by Onsemi! With a peak wavelength of 945nm and superior GaAs semiconductor material, this cutting-edge technology offers unparalleled performance and reliability. Whether used in security systems, remote controls, or industrial applications, the SLR935A7 provides a crisp and efficient output with a viewing angle of 10°. Trust Onsemi's expertise and experience to bring you the best in IR LED technology. Upgrade your projects today with the SLR935A7!

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

High maximum forward current allows for a bright and powerful infrared light output.

Peak Wavelength (nm): 945

Peak wavelength of 945nm is ideal for applications such as night vision, remote control systems, and security cameras.

Maximum Operating Temperature: 80 °C

Wide operating temperature range of -25 °C to 80°C ensures reliable performance in various environmental conditions.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature allows for use in cold environments without compromising performance.

Maximum Response Time: 0.000001 s

Fast response time of 0.000001 seconds ensures quick and efficient operation in applications requiring rapid infrared light emission.

Maximum Reverse Voltage: 5 V

High maximum reverse voltage rating of 5V provides protection against reverse current flow, increasing the overall reliability of the product.

Semiconductor Material: GaAs

Use of Gallium Arsenide (GaAs) semiconductor material offers high efficiency and reliability, making the product a durable choice for long-term use.

Viewing Angle: 10°

Narrow viewing angle of 10° allows for concentrated and focused infrared light output, ideal for specific applications requiring precise illumination.

Spectral Bandwidth: 45 m

Wide spectral bandwidth of 45nm enables versatile use in various applications, providing flexibility in choosing the appropriate wavelength for specific needs.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature simplifies the installation process and ensures secure attachment, making it easy to integrate the product into electronic devices.

Maximum Forward Voltage: 1.5 V

Low maximum forward voltage minimizes power consumption and heat generation, promoting energy efficiency and prolonging the product's lifespan.

Technical Specifications

Infrared LEDs SLR935A7 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

10 deg

Trade Compliance

SLR935A7 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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