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SLR931AV

Onsemi

SLR931AV by Onsemi

SLR931AV by Onsemi is an Infrared LED with 0.1A forward current, 945nm peak wavelength, and 20° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -25 °C to 80°C. Through hole mount feature ensures easy installation in various devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,378 parts In-Stock

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Vyrian

USA . 689 parts In-Stock

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689

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Kulean Microsystems

USA . 5,234 parts In-Stock

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5,234

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TANS Electronics

Latvia . 4,279 parts In-Stock

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Problanco Electronics

Mexico . 2,998 parts In-Stock

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Corphita

USA . 2,250 parts In-Stock

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SupplyDigital Components

Austria . 997 parts In-Stock

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UHIMA Technologies

Türkiye . 666 parts In-Stock

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Corohmni

South Africa . 68 parts In-Stock

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Overview

Illuminate your world with the SLR931AV by Onsemi, a top-tier manufacturer of cutting-edge technology. This Infrared LED offers unparalleled quality and reliability, making it perfect for various applications in industries such as security systems, night vision cameras, and remote controls. Experience the superior performance and exceptional value that this product brings to your projects. Trust Onsemi to deliver innovation that exceeds expectations.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

With a high maximum forward current, this infrared LED can handle more power without overheating, ensuring reliable performance.

Peak Wavelength (nm): 945

The peak wavelength of 945 nm indicates that this infrared LED provides optimal performance for applications requiring this specific wavelength.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C allows this infrared LED to be used in a wide range of environments without the risk of overheating.

Minimum Operating Temperature: -25 °C

With a low minimum operating temperature of -25 °C, this infrared LED can operate effectively even in cold conditions.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5 V provides a good level of protection against reverse current flow, increasing the durability of this infrared LED.

Viewing Angle: 20°

The narrow viewing angle of 20° ensures focused and precise illumination, making this infrared LED suitable for applications requiring directed light.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process of this infrared LED, making it convenient to use in various electronic projects.

Technical Specifications

Infrared LEDs SLR931AV attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR931AV Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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