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SLR931A

Onsemi

SLR931A by Onsemi

SLR931A by Onsemi is an Infrared LED with a peak wavelength of 945nm and max forward current of 0.1A. It operates b/w -25 °C to 85°C, has a viewing angle of 10°, and can withstand a max reverse voltage of 5V. Ideal for applications requiring precise infrared illumination in through-hole mounting setups.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 1,423 parts In-Stock

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Vyrian

USA . 373 parts In-Stock

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Prism Electronics

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Kulean Microsystems

USA . 5,452 parts In-Stock

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TANS Electronics

Latvia . 3,460 parts In-Stock

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Problanco Electronics

Mexico . 1,915 parts In-Stock

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Kepictronics

USA . 1,500 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 661 parts In-Stock

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UHIMA Technologies

Türkiye . 617 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 62 parts In-Stock

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Overview

Illuminate your world with the SLR931A by Onsemi, a top-quality infrared LED that offers unparalleled performance and reliability. Onsemi is known for its cutting-edge technology and innovation, making them a trusted manufacturer in the industry. This versatile component is perfect for a wide range of applications, from security systems to medical devices. With a peak wavelength of 945nm and a maximum forward current of 0.1A, this LED provides brilliant illumination while maintaining efficiency. Upgrade your projects with the SLR931A and experience the superior value and benefits it brings to your designs.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low forward current requirement helps in reducing power consumption and increasing efficiency of the product.

Peak Wavelength (nm): 945

The specific peak wavelength of 945 nm makes this product suitable for specific applications where this wavelength is required.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for stable performance even in challenging thermal conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures that the product can function in a wide range of environments, including colder temperatures.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5 V ensures protection of the component from voltage spikes and reverse polarity situations.

Viewing Angle: 10°

The narrow viewing angle of 10° provides precise directionality, making this product ideal for focused infrared illumination.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and reliable installation of the product on circuit boards, ensuring durability and stability.

Technical Specifications

Infrared LEDs SLR931A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

10 deg

Trade Compliance

SLR931A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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