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SLR938C

Onsemi

SLR938C by Onsemi

SLR938C by Onsemi is an Infrared LED with peak wavelength of 945nm, forward current of 0.1A, and response time of 0.000001s. Ideal for applications requiring precise infrared illumination in a temperature range from -20 °C to 80°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,730 parts In-Stock

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Vyrian

USA . 391 parts In-Stock

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Kepictronics

USA . 6,956 parts In-Stock

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Kulean Microsystems

USA . 6,051 parts In-Stock

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SupplyDigital Components

Austria . 5,087 parts In-Stock

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TANS Electronics

Latvia . 3,019 parts In-Stock

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Corphita

USA . 2,459 parts In-Stock

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Problanco Electronics

Mexico . 1,637 parts In-Stock

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UHIMA Technologies

Türkiye . 827 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 76 parts In-Stock

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Overview

Elevate your infrared LED experience with the SLR938C by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology that exceeds industry standards. The SLR938C is perfect for a wide range of applications, offering unmatched performance and precision. With a maximum forward current of 0.1A and peak wavelength of 945nm, this product ensures optimal functionality in any environment. Trust Onsemi to provide you with the value and benefits you deserve, making the SLR938C an essential component for your next project.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low maximum forward current allows for efficient power usage and longer product lifespan.

Peak Wavelength (nm): 945

The peak wavelength of 945nm makes this product suitable for applications requiring specific infrared light emission.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature ensures reliable performance even in warmer environments.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature ensures this product can be used in a wide range of environments.

Maximum Response Time: 0.000001 s

The extremely fast maximum response time makes this product ideal for applications requiring quick light emission.

Maximum Reverse Voltage: 5 V

The low maximum reverse voltage helps protect the product from damage in case of reverse polarity.

Semiconductor Material: GaAs

The Gallium Arsenide semiconductor material used in this product provides high efficiency and reliability.

Viewing Angle: 20°

The 20° viewing angle offers a focused and directional light output for precise applications.

Spectral Bandwidth: 45 m

The wide spectral bandwidth of 45nm allows this product to emit a broader range of infrared light.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to secure this product in place for convenient installation.

Maximum Forward Voltage: 1.5 V

The low maximum forward voltage helps reduce power consumption and overall operating costs.

Technical Specifications

Infrared LEDs SLR938C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-20 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR938C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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