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QEC123.0044D

Onsemi

QEC123.0044D by Onsemi

QEC123.0044D by Onsemi is a 2.95mm IR LED with peak wavelength of 890nm, max forward current of 0.05A, and max forward voltage of 1.7V. Ideal for applications requiring infrared illumination in a compact form factor such as security cameras and proximity sensors due to its small size and high efficiency.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,410 parts In-Stock

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Digiode

USA . 2,222 parts In-Stock

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Kulean Microsystems

USA . 6,664 parts In-Stock

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TANS Electronics

Latvia . 4,770 parts In-Stock

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Problanco Electronics

Mexico . 4,026 parts In-Stock

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Corphita

USA . 1,352 parts In-Stock

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SupplyDigital Components

Austria . 847 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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UHIMA Technologies

Türkiye . 287 parts In-Stock

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Overview

Enhance your infrared applications with the QEC123.0044D by Onsemi, a high-quality INFRARED LED that delivers superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this ROUND-shaped LED offers a peak wavelength of 890nm and a maximum forward current of 0.05A. Whether you're designing security systems, motion sensors, or industrial automation equipment, this product provides exceptional value, efficiency, and precision. Elevate your projects with the QEC123.0044D and experience the difference today!

Feature Benefit Bullets

Configuration: SINGLE

Single configuration ensures simplicity and ease of use in various applications.

Size: 2.95 mm

Compact size allows for flexibility in design and integration into smaller devices.

Maximum Forward Current: 0.05 A

Low forward current consumption helps in reducing overall power consumption.

Peak Wavelength (nm): 890

Peak wavelength of 890nm provides efficient and focused infrared emission.

Optoelectronic Type: INFRARED LED

Infrared LED technology allows for reliable and precise infrared light output.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures stability and performance in various environments.

Shape: ROUND

Round shape enables uniform light emission and easy integration in optical systems.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for use in extreme conditions.

Maximum Reverse Voltage: 5 V

High maximum reverse voltage rating ensures protection against reverse polarity.

Semiconductor Material: SILICON

Silicon semiconductor material offers high reliability and performance in infrared applications.

Mounting Feature: RADIAL MOUNT

Radial mounting feature simplifies installation and ensures secure placement in the device.

Maximum Forward Voltage: 1.7 V

Low forward voltage drop ensures efficient energy conversion and minimal power loss.

Technical Specifications

Infrared LEDs QEC123.0044D attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.7 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

890

Maximum Reverse Voltage:

5 V

Semiconductor Material:

SILICON

Shape:

ROUND

Size:

2.95 mm

Trade Compliance

QEC123.0044D Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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