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QEC123

Onsemi

QEC123 by Onsemi

QEC123 by Onsemi is a 3mm ROUND INFRARED LED with peak wavelength of 890nm. It has max forward current of 0.05A and max forward voltage of 1.7V, suitable for RADIAL MOUNT applications in optoelectronics due to its AlGaAs semiconductor material and 18° viewing angle.

Median Price

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Vyrian

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J2 Sourcing AB

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Problanco Electronics

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Kulean Microsystems

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A-Z Elektronik GmbH

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TANS Electronics

Latvia . 2,261 parts In-Stock

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Corphita

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Türkiye . 816 parts In-Stock

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Overview

Illuminate your world with the QEC123 by Onsemi, a top-quality Infrared LED that delivers unmatched performance and reliability. Manufactured by industry leader Onsemi, this product offers exceptional value and benefits for a variety of applications. Perfect for security systems, night vision cameras, and proximity sensors, the QEC123 is a versatile solution that will exceed your expectations. Experience the superior quality and precision engineering of Onsemi with the QEC123 Infrared LED.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes the product easy to install and use.

Size: 3 mm

Compact size allows for versatile placement in various applications.

Maximum Forward Current: 0.05 A

Low forward current consumption ensures efficient power usage.

Peak Wavelength (nm): 890

Peak wavelength of 890 nm provides strong infrared emission for effective use.

Optoelectronic Type: INFRARED LED

Specifically designed as an infrared LED for optimal performance in infrared applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in various environments without overheating.

Shape: ROUND

Round shape provides uniform light distribution and easy integration into different systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the product remains operational even in cold conditions.

Maximum Reverse Voltage: 5 V

Maximum reverse voltage protection up to 5V ensures the longevity of the product.

Semiconductor Material: AlGaAs

AlGaAs semiconductor material offers high efficiency and reliability for the LED.

Viewing Angle: 18°

Wide viewing angle of 18° allows for effective coverage and illumination in various applications.

Mounting Feature: RADIAL MOUNT

Radial mount feature simplifies the installation process and provides secure placement.

Maximum Forward Voltage: 1.7 V

Low forward voltage enhances energy efficiency and minimizes power consumption.

Technical Specifications

Infrared LEDs QEC123 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.7 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

890

Maximum Reverse Voltage:

5 V

Semiconductor Material:

AlGaAs

Shape:

ROUND

Size:

3 mm

Viewing Angle:

18 deg

Trade Compliance

QEC123 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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