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SLR935A

Onsemi

SLR935A by Onsemi

SLR935A by Onsemi is an Infrared LED with peak wavelength of 945nm, forward current of 0.1A, and response time of 1µs. Ideal for applications requiring precise IR illumination in a temperature range from -25 °C to 80°C.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 1,147 parts In-Stock

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Vyrian

USA . 333 parts In-Stock

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Kepictronics

USA . 19,500 parts In-Stock

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19,500

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Problanco Electronics

Mexico . 8,325 parts In-Stock

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SupplyDigital Components

Austria . 5,745 parts In-Stock

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TANS Electronics

Latvia . 1,706 parts In-Stock

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Kulean Microsystems

USA . 1,473 parts In-Stock

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UHIMA Technologies

Türkiye . 903 parts In-Stock

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Corphita

USA . 792 parts In-Stock

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Corohmni

South Africa . 156 parts In-Stock

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Overview

Illuminate your world with the SLR935A by Onsemi, a top-quality Infrared LED designed to meet all your lighting needs. With a peak wavelength of 945nm and a viewing angle of 10°, this powerful LED offers exceptional performance in various applications. From security systems to industrial automation, the SLR935A provides reliable and efficient illumination. Trust in Onsemi's reputation for excellence and invest in the superior quality and value of the SLR935A for all your lighting projects.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This allows for a higher current to flow through the LED, leading to brighter output.

Peak Wavelength (nm): 945

The specific peak wavelength of 945nm makes this LED suitable for infrared applications requiring this particular wavelength.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this LED can withstand high temperatures without compromising performance.

Minimum Operating Temperature: -25 °C

The wide range of operating temperatures (-25 °C to 80°C) makes this LED versatile and suitable for various environments.

Maximum Response Time: 0.000001 s

The fast response time of 0.000001 seconds ensures quick activation and deactivation of the LED, ideal for applications that require rapid switching.

Maximum Reverse Voltage: 5 V

With a maximum reverse voltage of 5V, this LED is protected from reverse voltage spikes, increasing its reliability and lifespan.

Semiconductor Material: GaAs

Gallium Arsenide (GaAs) is known for its high efficiency and reliability, making this LED a dependable choice for infrared applications.

Viewing Angle: 10°

The narrow viewing angle of 10° provides focused and directional infrared light, suitable for specific target illumination.

Spectral Bandwidth: 45 m

With a spectral bandwidth of 45nm, this LED emits a narrow range of infrared light, increasing its sensitivity and accuracy in detection applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies installation and ensures secure placement of the LED, making it convenient for use in various electronic devices.

Maximum Forward Voltage: 1.5 V

The low forward voltage of 1.5V ensures efficient power consumption and reduces heat generation, making this LED energy-efficient and durable.

Technical Specifications

Infrared LEDs SLR935A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

10 deg

Trade Compliance

SLR935A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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