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SLR932AV8

Onsemi

SLR932AV8 by Onsemi

SLR932AV8 by Onsemi is an Infrared LED with 0.1A forward current, 945nm peak wavelength, and 60° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -25 °C to 80°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,994 parts In-Stock

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Vyrian

USA . 709 parts In-Stock

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Problanco Electronics

Mexico . 6,014 parts In-Stock

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Kulean Microsystems

USA . 5,134 parts In-Stock

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TANS Electronics

Latvia . 1,955 parts In-Stock

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SupplyDigital Components

Austria . 1,491 parts In-Stock

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Corphita

USA . 537 parts In-Stock

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Corohmni

South Africa . 369 parts In-Stock

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UHIMA Technologies

Türkiye . 141 parts In-Stock

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Overview

Illuminate your world with the SLR932AV8 Infrared LED from Onsemi. With a peak wavelength of 945nm and a viewing angle of 60°, this high-quality LED offers exceptional performance for a wide range of applications. Whether you're enhancing security systems, designing remote controls, or working on medical devices, the SLR932AV8 delivers reliable and efficient lighting solutions. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that this superior product brings to your projects. Elevate your creations with the SLR932AV8 Infrared LED today.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low maximum forward current ensures efficient use of power and longer product lifespan.

Peak Wavelength (nm): 945

The peak wavelength of 945nm is ideal for applications requiring infrared light, such as remote controls and security systems.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this product can withstand high temperatures without compromising performance.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this product to operate reliably in cold environments.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5V protects the LED from potential damage due to reverse polarity.

Viewing Angle: 60°

The wide viewing angle of 60° ensures broad coverage for infrared applications, enhancing versatility.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature simplifies the installation process, making it convenient for mounting on circuit boards or other surfaces.

Technical Specifications

Infrared LEDs SLR932AV8 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

60 deg

Trade Compliance

SLR932AV8 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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