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QED123UL

Onsemi

QED123UL by Onsemi

QED123UL by Onsemi is a single infrared LED with peak wavelength of 880nm. It has a max forward current of 0.1A and operates b/w -40°C to 100°C. Ideal for applications requiring IR illumination in compact spaces, such as security cameras and proximity sensors.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,723 parts In-Stock

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Vyrian

USA . 400 parts In-Stock

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400

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Nova Conductors

Japan . 21 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,673 parts In-Stock

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$0.286

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AZTECH Wire

Italy . 372 parts In-Stock

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$11.203

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Ampacity Inc.

Singapore . 1,285 parts In-Stock

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$15.100

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Component Stockers USA

USA . 281 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,986 parts In-Stock

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Problanco Electronics

Mexico . 7,716 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Argo Parts USA

USA . 4,650 parts In-Stock

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Kulean Microsystems

USA . 4,619 parts In-Stock

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Continental Prestige Electronics

USA . 3,575 parts In-Stock

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Perfect Parts

USA . 2,798 parts In-Stock

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Supply Digital

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Corphita

USA . 1,523 parts In-Stock

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TANS Electronics

Latvia . 1,431 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Corohmni

South Africa . 282 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Illuminate your world with the QED123UL Infrared LED by Onsemi. Crafted with precision and expertise, this high-quality product offers unparalleled performance in a compact 4.95 mm size. Ideal for applications such as remote controls, security systems, and motion sensors, this INFRARED LED delivers peak efficiency at a peak wavelength of 880nm. Experience the reliability and durability of Onsemi's technology, while enjoying the convenience and value that this product brings to your projects. Embrace innovation with the QED123UL and light up your success today.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy handling and integration into various electronic devices.

Size: 4.95 mm

Compact size enables the LED to be used in applications where space is limited.

Maximum Forward Current: 0.1 A

Capable of handling a maximum forward current of 0.1 A, ensuring reliable performance under normal operating conditions.

Peak Wavelength (nm): 880

Peak wavelength of 880 nm provides high efficiency and accuracy in infrared lighting applications.

Optoelectronic Type: INFRARED LED

Specifically designed as an infrared LED, ensuring optimized performance in infrared lighting scenarios.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this LED can withstand high temperature environments without compromising performance.

Minimum Operating Temperature: -40 °C

Capable of operating at temperatures as low as -40°C, making it suitable for a wide range of environmental conditions.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability for easy installation and reliable connection.

Technical Specifications

Infrared LEDs QED123UL attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Configuration:

SINGLE

Maximum Forward Current:

.1 A

JESD-609 Code:

e3

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Shape:

ROUND

Size:

4.95 mm

Terminal Finish:

Trade Compliance

QED123UL Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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