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SLR902A

Onsemi

SLR902A by Onsemi

SLR902A by Onsemi is an Infrared LED with 0.05A max forward current, peak wavelength of 945nm, and 70° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -20 °C to 100°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,468 parts In-Stock

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Digiode

USA . 2,106 parts In-Stock

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2,106

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Kulean Microsystems

USA . 7,651 parts In-Stock

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SupplyDigital Components

Austria . 7,150 parts In-Stock

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Problanco Electronics

Mexico . 3,620 parts In-Stock

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TANS Electronics

Latvia . 1,606 parts In-Stock

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Corphita

USA . 903 parts In-Stock

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903

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UHIMA Technologies

Türkiye . 759 parts In-Stock

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Corohmni

South Africa . 452 parts In-Stock

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Overview

Enhance your infrared LED applications with the SLR902A by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their products. The SLR902A offers a peak wavelength of 945nm and a maximum forward current of 0.05A, making it ideal for various applications. Whether you're working on security systems, remote controls, or proximity sensors, this product provides exceptional value and performance. Trust Onsemi for cutting-edge technology that delivers unmatched benefits to meet your needs.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

This product has a low maximum forward current, making it energy efficient and suitable for applications where power consumption is a concern.

Peak Wavelength (nm): 945

With a peak wavelength of 945nm, this product is ideal for applications requiring infrared light in this specific wavelength range.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of 100 °C allows this product to be used in environments with elevated temperatures without performance degradation.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20 °C ensures that this product can also operate in colder environments without any issues.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5V provides protection against reverse polarity and helps in ensuring the durability of the product.

Viewing Angle: 70°

The wide viewing angle of 70° allows for better coverage and distribution of the infrared light emitted by this product.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design of this product makes it easy to install and secure in place, enhancing its usability in various applications.

Technical Specifications

Infrared LEDs SLR902A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.05 A

Mounting Feature:

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

70 deg

Trade Compliance

SLR902A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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