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SLR932A8

Onsemi

SLR932A8 by Onsemi

SLR932A8 by Onsemi is an Infrared LED with 0.1A forward current, 945nm peak wavelength, and 28° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -25 °C to 80°C. Through hole mount feature makes it easy to install in various devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,391 parts In-Stock

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Digiode

USA . 355 parts In-Stock

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SupplyDigital Components

Austria . 3,416 parts In-Stock

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Problanco Electronics

Mexico . 2,914 parts In-Stock

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Corphita

USA . 1,813 parts In-Stock

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TANS Electronics

Latvia . 1,181 parts In-Stock

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Kulean Microsystems

USA . 961 parts In-Stock

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UHIMA Technologies

Türkiye . 829 parts In-Stock

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Corohmni

South Africa . 277 parts In-Stock

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Overview

Illuminate your world with the Onsemi SLR932A8 Infrared LED! Designed by a trusted manufacturer, this high-quality component offers a peak wavelength of 945nm and a maximum forward current of 0.1 A. Perfect for applications such as security systems, remote controls, and night vision devices, this LED provides reliable performance in a wide range of temperatures. Enhance your projects with the superior value and benefits of the SLR932A8 - experience the difference today!

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The high maximum forward current allows for efficient power consumption while providing sufficient brightness for use in various applications.

Peak Wavelength (nm): 945

The specific peak wavelength of 945 nm makes this product suitable for applications where infrared light is required to penetrate and interact with specific materials or objects.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C ensures that the LED can withstand heat and operate reliably in various environments without overheating.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows the LED to function effectively even in cold temperatures, making it versatile for use in a wide range of conditions.

Maximum Reverse Voltage: 5 V

The low maximum reverse voltage of 5 V helps protect the LED from potential damage due to reverse polarity or voltage spikes, ensuring its longevity and reliability.

Viewing Angle: 28°

The wide viewing angle of 28° provides a broad coverage area for the emitted infrared light, making it suitable for applications requiring a larger illumination area.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes installation and replacement of the LED easy and secure, ensuring stable and reliable connection for long-term use.

Technical Specifications

Infrared LEDs SLR932A8 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Viewing Angle:

28 deg

Trade Compliance

SLR932A8 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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