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SFH487-2

Infineon Technologies

SFH487-2 by Infineon Technologies

SFH487-2 by Infineon: Infrared LED with 0.1A max current, 880nm peak wavelength, and -55 to 100°C operating temp. Ideal for applications requiring fast response time, such as proximity sensors and optical switches.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Digital Electronic Gebert Verwaltungs UG

Germany . 9,250 parts In-Stock

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Vyrian

USA . 8,368 parts In-Stock

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Component Electronics Inc.

Canada . 800 parts In-Stock

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800

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ComSIT USA

USA . 175 parts In-Stock

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175

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Bristol Electronics

USA . 104 parts In-Stock

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104

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Digiode

USA . 73 parts In-Stock

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73

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Sogenti Electronics

Canada . 28 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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LittleDiode

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Modulus Dynamics

Lithuania . 3,333 parts In-Stock

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$0.114

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$0.109

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$0.105

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Aztec Data Supply Inc.

USA . 4,909 parts In-Stock

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$0.572

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Corohmni

South Africa . 6 parts In-Stock

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Semicontronic

India . 641 parts In-Stock

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$6.922

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$6.887

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AZTECH Wire

Italy . 334 parts In-Stock

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Ampacity Inc.

Singapore . 1,044 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,952 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 9,845 parts In-Stock

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Bastille Electronics

Australia . 4,602 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Corphita

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Robosynatics

Brazil . 900 parts In-Stock

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Lucentia Tech

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Continental Prestige Electronics

USA . 282 parts In-Stock

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Overview

Illuminate your world with the SFH487-2 by Infineon Technologies. This high-quality Infrared LED offers peak performance and reliability in a variety of applications. From remote controls to proximity sensors, this versatile component delivers value and efficiency. Experience the benefits of fast response time, wide viewing angle, and low forward voltage. Trust Infineon Technologies for superior technology that enhances your products and exceeds your expectations.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This allows for efficient current flow, ensuring the LED operates at a safe and optimal level.

Peak Wavelength (nm): 880

The 880nm peak wavelength is ideal for applications requiring infrared light to be emitted at a specific wavelength.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this LED can withstand high temperatures without compromising performance.

Minimum Operating Temperature: -55 °C

The LED can also operate at extremely low temperatures, making it suitable for a wide range of environments.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides reliable connectivity and durability for the LED.

Maximum Response Time: 0.0000006 s

The ultra-fast response time ensures rapid activation and deactivation of the LED, making it suitable for high-speed applications.

Maximum Reverse Voltage: 5 V

With a maximum reverse voltage of 5V, the LED is protected from voltage spikes and reverse polarity.

Semiconductor Material: GaAlAs

GaAlAs semiconductor material offers high efficiency and reliability for the LED's performance.

Viewing Angle: 40°

The 40° viewing angle provides a wide coverage area for the emitted infrared light.

Spectral Bandwidth: 80 m

The narrow spectral bandwidth of 80m enhances the LED's accuracy in emitting light at the desired wavelength.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the LED on circuit boards.

Maximum Forward Voltage: 1.8 V

The low maximum forward voltage of 1.8V indicates efficient power consumption and helps in reducing energy costs.

Technical Specifications

Infrared LEDs SFH487-2 attributes and parameters. Explore more Infrared LEDs devices from Infineon Technologies

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.8 V

JESD-609 Code:

e0

Mounting Feature:

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Peak Wavelength (nm):

880

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

80 m

Sub-Category:

Infrared LEDs

Terminal Finish:

Viewing Angle:

40 deg

Trade Compliance

SFH487-2 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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