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SLR938A8

Onsemi

SLR938A8 by Onsemi

SLR938A8 by Onsemi is an Infrared LED with 0.1A forward current, 945nm peak wavelength, and 80 °C max operating temp. Ideal for applications requiring IR illumination in environments ranging from -25°C to 80°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,020 parts In-Stock

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Vyrian

USA . 53 parts In-Stock

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SupplyDigital Components

Austria . 6,575 parts In-Stock

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TANS Electronics

Latvia . 5,923 parts In-Stock

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Problanco Electronics

Mexico . 4,003 parts In-Stock

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Kulean Microsystems

USA . 3,902 parts In-Stock

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Corphita

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Corohmni

South Africa . 329 parts In-Stock

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Overview

Experience superior quality and performance with the SLR938A8 Infrared LED by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation in every product they create. The SLR938A8 is perfect for a wide range of applications, offering exceptional value and benefits to customers. Illuminate your projects with confidence using this high-quality Infrared LED, designed to meet your needs with reliability and efficiency. Choose Onsemi for unmatched quality and results.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This product can handle a maximum forward current of 0.1 A, making it suitable for high efficiency and low power consumption applications.

Peak Wavelength (nm): 945

With a peak wavelength of 945 nm, this product is ideal for applications requiring infrared illumination or detection at a specific wavelength.

Maximum Operating Temperature: 80 °C

The maximum operating temperature of 80 °C ensures that this product can withstand high temperature environments without compromising its performance.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25 °C, this product is suitable for use in cold environments where other components may fail to operate.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5 V provides protection against reverse polarity or voltage spikes, ensuring the longevity of the product.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature simplifies the installation process, making it easy to secure the product onto a circuit board or mounting surface.

Technical Specifications

Infrared LEDs SLR938A8 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Sub-Category:

Infrared LEDs

Trade Compliance

SLR938A8 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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