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TIL33

Texas Instruments

TIL33 by Texas Instruments

TIL33 by Texas Instruments is an Infrared LED with peak wavelength of 940nm, forward current of 0.2A, and viewing angle of 80°. It operates b/w -60°C to 150°C, making it ideal for applications requiring fast response times such as remote controls and proximity sensors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,995 parts In-Stock

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6,995

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Digiode

USA . 2,194 parts In-Stock

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2,194

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Distributors (Availability)

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Parana Technologies

USA . 1,089 parts In-Stock

1+ parts

$0.269

100+ parts

-

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$1.532

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1,089

$0.269

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$1.532

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DigiPath Technology Company

USA . 437 parts In-Stock

1+ parts

$0.296

100+ parts

$0.272

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-

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437

$0.296

$0.272

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IDEA Electronic Components Group

UK . 2,307 parts In-Stock

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$0.302

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$0.272

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2,307

$0.302

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$0.272

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ChromeModa Solutions

Germany . 1,046 parts In-Stock

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$0.302

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$0.248

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1,046

$0.302

$0.248

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One Stop Electronics

USA . 308 parts In-Stock

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$2.100

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308

$2.100

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Semicontronic

India . 1,470 parts In-Stock

1+ parts

$3.100

100+ parts

$3.022

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$3.007

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1,470

$3.100

$3.022

$3.007

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AZTECH Wire

Italy . 329 parts In-Stock

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$16.304

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329

$16.304

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Ampacity Inc.

Singapore . 800 parts In-Stock

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$17.100

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800

$17.100

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Corphita

USA . 434 parts In-Stock

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Corohmni

South Africa . 109 parts In-Stock

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Overview

Illuminate your world with the TIL33 by Texas Instruments, a top-quality infrared LED that offers unmatched performance and reliability. Manufactured by a trusted industry leader, this product is perfect for a wide range of applications including remote controls, security systems, and proximity sensors. With its fast response time, high forward current, and wide viewing angle, the TIL33 provides exceptional value and benefits to customers seeking cutting-edge technology for their projects. Trust Texas Instruments to deliver superior quality and innovation with the TIL33.

Feature Benefit Bullets

Maximum Forward Current: 0.2 A

This high maximum forward current allows the Infrared LED to handle more power, providing efficient performance in various applications.

Peak Wavelength (nm): 940

The peak wavelength of 940nm makes this Infrared LED suitable for applications where this specific wavelength is required for optimal performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this Infrared LED can withstand elevated temperatures, making it suitable for industrial or high-temperature environments.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature of -60°C allows this Infrared LED to function effectively even in extreme cold conditions.

Maximum Response Time: 0.0000006 s

The quick response time of 0.0000006 seconds ensures rapid operation of the Infrared LED, making it ideal for applications that require fast response rates.

Maximum Reverse Voltage: 2 V

The low maximum reverse voltage of 2 volts helps protect the LED from reverse current, enhancing its reliability and longevity.

Semiconductor Material: GaAs

The use of Gallium Arsenide (GaAs) as the semiconductor material offers high efficiency and reliability, making this Infrared LED a durable and high-performance choice.

Viewing Angle: 80°

The wide viewing angle of 80° ensures a broad coverage area for the emitted infrared light, making it suitable for applications where a wide detection range is required.

Spectral Bandwidth: 50 m

The narrow spectral bandwidth of 50 millimeters enhances the accuracy and precision of the emitted light, making this Infrared LED suitable for applications that require specific wavelength ranges.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process, providing a secure and reliable mounting method for the Infrared LED in various devices or systems.

Maximum Forward Voltage: 1.7 V

The low maximum forward voltage requirement of 1.7 volts results in efficient power consumption and helps increase the overall energy efficiency of the Infrared LED.

Technical Specifications

Infrared LEDs TIL33 attributes and parameters. Explore more Infrared LEDs devices from Texas Instruments

Specs

Maximum Forward Current:

.2 A

Maximum Forward Voltage:

1.7 V

Mounting Feature:

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-60 Cel

Peak Wavelength (nm):

940

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

2 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

50 m

Sub-Category:

Infrared LEDs

Viewing Angle:

80 deg

Trade Compliance

TIL33 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.A

ECCN Governance

EAR

HTS

8541.40.20.00

SB

8541.40.20.00

NSN

5980-01-186-3915, 5980011863915, 5980-01-118-6312, 5980011186312

NIIN

011863915, 011186312

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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