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TIL32

Texas Instruments

TIL32 by Texas Instruments

TIL32 by Texas Instruments is an Infrared LED with a peak wavelength of 940nm and max forward current of 0.04A. It operates b/w -40°C to 85°C, making it suitable for applications requiring fast response times such as proximity sensors and optical switches due to its short response time of 0.0000006s.

Median Price

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Lifecycle Status

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8

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1k+

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Vyrian

USA . 6,701 parts In-Stock

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Digiode

USA . 2,818 parts In-Stock

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A&K Electronics

USA . 840 parts In-Stock

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Bristol Electronics

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Huijzer Components

Netherlands . 100 parts In-Stock

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MISTER SPROCKETS

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ACDS - Activité Composants Distribution Service

France . 76 parts In-Stock

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LittleDiode

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Parana Technologies

USA . 2,361 parts In-Stock

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$0.445

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$41.325

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$0.400

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DigiPath Technology Company

USA . 1,663 parts In-Stock

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$0.490

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$0.451

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ChromeModa Solutions

Germany . 1,071 parts In-Stock

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$0.410

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IDEA Electronic Components Group

UK . 154 parts In-Stock

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AZTECH Wire

Italy . 718 parts In-Stock

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One Stop Electronics

USA . 577 parts In-Stock

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Corphita

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Elevate your projects with the TIL32 by Texas Instruments, a top-of-the-line infrared LED that guarantees exceptional quality and performance. Manufactured by industry leader Texas Instruments, this versatile component is perfect for a wide range of applications, from remote controls to security systems. With its reliable operation, quick response time, and wide viewing angle, the TIL32 delivers unmatched value and benefits to customers looking for high-quality components for their projects. Upgrade your creations today with the TIL32 and experience the difference it makes!

Feature Benefit Bullets

Maximum Forward Current: 0.04 A

With a high maximum forward current, this infrared LED can handle higher power without overheating, making it reliable for extended use.

Peak Wavelength (nm): 940

The peak wavelength of 940 nm ensures that this infrared LED provides optimal performance for various applications requiring infrared illumination.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows this infrared LED to operate efficiently even in harsh environments with elevated temperatures.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature of -40°C, this infrared LED can function reliably in cold conditions without compromising performance.

Maximum Response Time: 0.0000006 s

The ultra-fast maximum response time of 0.0000006 seconds ensures rapid activation and deactivation of this infrared LED, making it ideal for applications requiring quick response.

Maximum Reverse Voltage: 2 V

The low maximum reverse voltage of 2 volts provides protection against reverse current flow, enhancing the overall reliability and longevity of this infrared LED.

Semiconductor Material: GaAs

Utilizing Gallium Arsenide (GaAs) as the semiconductor material offers high efficiency and performance, making this infrared LED a top choice for demanding applications.

Viewing Angle: 35°

With a wide viewing angle of 35°, this infrared LED can cover a larger area, providing better illumination and coverage for various applications.

Spectral Bandwidth: 50 m

The spectral bandwidth of 50 nm ensures that this infrared LED emits a narrow range of wavelengths, making it suitable for specific applications that require precise infrared illumination.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process of this infrared LED, making it convenient for integration into electronic devices or circuits.

Maximum Forward Voltage: 1.6 V

The low maximum forward voltage of 1.6 volts ensures efficient energy consumption without compromising the performance of this infrared LED, making it cost-effective to operate.

Technical Specifications

Infrared LEDs TIL32 attributes and parameters. Explore more Infrared LEDs devices from Texas Instruments

Specs

Maximum Forward Current:

.04 A

Maximum Forward Voltage:

1.6 V

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

940

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

2 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

50 m

Sub-Category:

Infrared LEDs

Viewing Angle:

35 deg

Trade Compliance

TIL32 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

NSN

5980-01-033-0710, 5980010330710

NIIN

010330710

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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