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QTLP660CIR

Onsemi

QTLP660CIR by Onsemi

The Onsemi QTLP660CIR is a 1.8mm infrared LED with peak wavelength of 940nm, max forward current of 0.065A, and max forward voltage of 4V. Ideal for applications requiring surface mount configuration, it operates b/w -40 °C to 85°C and has a viewing angle of 30°.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Vyrian

USA . 1,995 parts In-Stock

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Digiode

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Kepictronics

USA . 20,000 parts In-Stock

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Problanco Electronics

Mexico . 7,656 parts In-Stock

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SupplyDigital Components

Austria . 4,132 parts In-Stock

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TANS Electronics

Latvia . 3,702 parts In-Stock

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Supply Digital

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Corphita

USA . 1,519 parts In-Stock

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Kulean Microsystems

USA . 1,297 parts In-Stock

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UHIMA Technologies

Türkiye . 880 parts In-Stock

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Corohmni

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Overview

Illuminate your world with the QTLP660CIR by Onsemi, a top-tier manufacturer of optoelectronic components. As a leading player in the infrared LED category, Onsemi delivers superior quality and reliability in every product. Ideal for applications requiring precise sensing or remote control, this single configuration LED offers peak performance with a peak wavelength of 940nm. With a wide operating temperature range and surface mount feature, the QTLP660CIR is a versatile solution that adds tremendous value to your projects. Light up your designs with Onsemi's cutting-edge technology and experience the difference in performance and efficiency.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to use and install, perfect for simple applications.

Size: 1.8 mm

Small size allows for versatile placement and integration into various devices.

Maximum Forward Current: 0.065 A

High forward current ensures bright and consistent infrared light output.

Peak Wavelength (nm): 940

Peak wavelength of 940 nm provides optimal performance for infrared applications.

Optoelectronic Type: INFRARED LED

Specifically designed as an infrared LED for reliable and efficient operation.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in various environmental conditions.

Shape: CYLINDRICAL

Cylindrical shape provides a uniform and focused infrared light emission.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Packing Method: TR

TR packing method ensures safe and convenient handling during transportation and storage.

Maximum Reverse Voltage: 5 V

High reverse voltage protection ensures the longevity and durability of the infrared LED.

Semiconductor Material: GaAs

GaAs semiconductor material offers high efficiency and reliability for superior performance.

Viewing Angle: 30°

Wide viewing angle of 30° allows for broader coverage and visibility.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and integration into various electronic devices.

Maximum Forward Voltage: 4 V

Low forward voltage requirement ensures energy-efficient operation of the infrared LED.

Technical Specifications

Infrared LEDs QTLP660CIR attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Forward Current:

.065 A

Maximum Forward Voltage:

4 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

940

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Shape:

CYLINDRICAL

Size:

1.8 mm

Viewing Angle:

30 deg

Trade Compliance

QTLP660CIR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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