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QTLP610CIR

Onsemi

QTLP610CIR by Onsemi

The Onsemi QTLP610CIR is a 2.2mm ROUND INFRARED LED with a peak wavelength of 940nm, max forward current of 0.065A, and max forward voltage of 1.5V. Ideal for applications requiring IR illumination in SURFACE MOUNT configurations with a wide 160° viewing angle.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,913 parts In-Stock

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Digiode

USA . 2,051 parts In-Stock

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TANS Electronics

Latvia . 7,542 parts In-Stock

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Problanco Electronics

Mexico . 4,699 parts In-Stock

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SupplyDigital Components

Austria . 1,928 parts In-Stock

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Corphita

USA . 1,220 parts In-Stock

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UHIMA Technologies

Türkiye . 910 parts In-Stock

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Supply Digital

USA . 306 parts In-Stock

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Kulean Microsystems

USA . 131 parts In-Stock

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Corohmni

South Africa . 108 parts In-Stock

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Overview

Illuminate your world with the QTLP610CIR by Onsemi, a top-quality infrared LED that boasts superior performance and reliability. Crafted by industry-leading manufacturer Onsemi, this innovative product is perfect for a wide range of applications, from remote controls to security systems. With its compact size, high durability, and excellent efficiency, the QTLP610CIR offers unmatched value and benefits to customers looking for cutting-edge technology. Upgrade your projects today with the powerful capabilities of the QTLP610CIR.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easier control and integration into various applications.

Size: 2.2 mm

Compact size enables flexibility in placement and use in smaller devices or spaces.

Maximum Forward Current: 0.065 A

Efficiently handles current flow to ensure stable operation and longevity.

Peak Wavelength (nm): 940

Optimal wavelength for infrared applications, ensuring accurate and reliable performance.

Optoelectronic Type: INFRARED LED

Specifically designed for infrared lighting needs, providing focused and effective illumination.

Maximum Operating Temperature: 85 °C

Can withstand higher temperatures, offering durability in a variety of environments.

Shape: ROUND

Round shape allows for uniform light distribution and versatile mounting options.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions, making it suitable for outdoor or industrial use.

Packing Method: TR, 7 INCH

Convenient packaging for storage and transport, ensuring product protection and handling ease.

Maximum Reverse Voltage: 5 V

Withstands reverse voltage to prevent damage, contributing to overall product reliability.

Viewing Angle: 160°

Wide viewing angle for broader coverage, ideal for surveillance or sensor applications.

Mounting Feature: SURFACE MOUNT

Easy surface mounting capability for quick installation and secure placement in electronic circuits.

Maximum Forward Voltage: 1.5 V

Optimal forward voltage for efficient energy usage, reducing power consumption and operating costs.

Technical Specifications

Infrared LEDs QTLP610CIR attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Configuration:

SINGLE

Maximum Forward Current:

.065 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR, 7 INCH

Peak Wavelength (nm):

940

Maximum Reverse Voltage:

5 V

Shape:

ROUND

Size:

2.2 mm

Viewing Angle:

160 deg

Trade Compliance

QTLP610CIR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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