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SLR981A

Onsemi

SLR981A by Onsemi

SLR981A by Onsemi is an Infrared LED with peak wavelength of 945nm, forward current of 0.1A, and response time of 1µs. Ideal for applications requiring a viewing angle of 30°, spectral bandwidth of 45m, and operating temperatures from -25 °C to 80°C.

Median Price

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Lifecycle Status

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1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 5,471 parts In-Stock

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SupplyDigital Components

Austria . 4,099 parts In-Stock

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Problanco Electronics

Mexico . 3,389 parts In-Stock

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Kulean Microsystems

USA . 1,429 parts In-Stock

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Corphita

USA . 388 parts In-Stock

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UHIMA Technologies

Türkiye . 155 parts In-Stock

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Corohmni

South Africa . 95 parts In-Stock

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Overview

Illuminate your world with the SLR981A by Onsemi - a top-quality infrared LED that offers unmatched reliability and performance. Manufactured by Onsemi, a trusted leader in the industry, this IR LED is perfect for a wide range of applications including remote controls, security systems, and proximity sensors. With a peak wavelength of 945nm and a maximum forward current of 0.1A, the SLR981A delivers exceptional value and benefits to customers looking for a high-quality solution. Trust Onsemi to light up your projects with the SLR981A.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low forward current requirement ensures efficient power usage and cost-effectiveness.

Peak Wavelength (nm): 945

The peak wavelength of 945nm makes this product suitable for specific applications requiring infrared light in that range.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature allows for reliable performance even in demanding environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures this product can be used in a wide range of environments without any issues.

Maximum Response Time: 0.000001 s

The extremely fast response time makes this product ideal for applications that require quick activation and deactivation of the infrared LEDs.

Maximum Reverse Voltage: 5 V

The low reverse voltage helps protect the LEDs from damage in case of reverse polarity connection.

Semiconductor Material: GaAs

The use of GaAs semiconductor material ensures high performance and reliability of the LEDs.

Viewing Angle: 30°

The 30° viewing angle provides a focused beam of infrared light, making it suitable for targeted applications.

Spectral Bandwidth: 45 m

The narrow spectral bandwidth of 45m ensures precise emission of infrared light, ideal for applications requiring specific wavelengths.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the LEDs on PCBs or other surfaces.

Maximum Forward Voltage: 1.5 V

The low forward voltage requirement ensures efficient power usage and compatibility with a wide range of power sources.

Technical Specifications

Infrared LEDs SLR981A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

30 deg

Trade Compliance

SLR981A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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