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SLR889C

Onsemi

SLR889C by Onsemi

SLR889C by Onsemi is an Infrared LED with peak wavelength of 880nm, forward current of 0.1A, and response time of 0.0000006s. Ideal for applications requiring a viewing angle of 20°, spectral bandwidth of 65m, and operating temperatures from -25 °C to 80°C.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

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TANS Electronics

Latvia . 7,255 parts In-Stock

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SupplyDigital Components

Austria . 6,828 parts In-Stock

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Kulean Microsystems

USA . 5,968 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 556 parts In-Stock

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Problanco Electronics

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Corohmni

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Overview

Illuminate your projects with the SLR889C by Onsemi, a top-tier manufacturer known for superior quality in Infrared LEDs. Perfect for applications in night vision technology, remote controls, and optical sensors, this cutting-edge product offers a peak wavelength of 880nm and a maximum response time of 0.0000006s. With a maximum forward current of 0.1A and a wide viewing angle of 20°, the SLR889C provides exceptional performance and reliability. Experience the value and benefits that this advanced technology brings to your projects today!

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This high maximum forward current allows for the LED to emit a bright and consistent infrared light.

Peak Wavelength (nm): 880

The peak wavelength of 880nm is ideal for applications requiring infrared illumination.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature, this infrared LED can withstand harsh environmental conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures that the LED can still function effectively in colder environments.

Maximum Response Time: 0.0000006 s

The quick response time allows the LED to react rapidly to input signals, making it suitable for high-speed applications.

Maximum Reverse Voltage: 5 V

The low maximum reverse voltage helps protect the LED from damage in case of reverse polarity.

Semiconductor Material: GaAlAs

GaAlAs is a reliable semiconductor material known for its durability and high performance in LEDs.

Viewing Angle: 20°

The narrow viewing angle of 20° provides focused and directional infrared light output.

Spectral Bandwidth: 65 m

The narrow spectral bandwidth of 65m enables the LED to emit a specific range of infrared light, ideal for targeted applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount allows for easy and secure installation of the LED on a circuit board.

Maximum Forward Voltage: 2 V

The low maximum forward voltage ensures efficient power consumption and prolonged LED lifespan.

Technical Specifications

Infrared LEDs SLR889C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

2 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

880

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

65 m

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR889C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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