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TIES36

Texas Instruments

TIES36 by Texas Instruments

TIES36 by Texas Instruments is an Infrared LED with peak wavelength of 910nm, forward current of 0.15A, and viewing angle of 25°. Ideal for applications requiring IR illumination such as security cameras, night vision systems, and proximity sensors due to its GaAs semiconductor material and spectral bandwidth of 30m. Operating temperatures range from -55°C to 100°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,524 parts In-Stock

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8,524

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Digiode

USA . 4,875 parts In-Stock

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4,875

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Parana Technologies

USA . 310 parts In-Stock

1+ parts

$0.692

100+ parts

-

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$1.731

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310

$0.692

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$1.731

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DigiPath Technology Company

USA . 602 parts In-Stock

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$0.762

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602

$0.762

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ChromeModa Solutions

Germany . 6,108 parts In-Stock

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$0.778

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$0.638

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6,108

$0.778

$0.638

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IDEA Electronic Components Group

UK . 444 parts In-Stock

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$0.778

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$0.700

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444

$0.778

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$0.700

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AZTECH Wire

Italy . 670 parts In-Stock

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$6.193

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670

$6.193

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Ampacity Inc.

Singapore . 409 parts In-Stock

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$7.100

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409

$7.100

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Semicontronic

India . 349 parts In-Stock

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$9.100

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$8.872

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$8.827

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349

$9.100

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One Stop Electronics

USA . 1,111 parts In-Stock

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$18.100

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$18.100

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Corphita

USA . 3,524 parts In-Stock

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Corohmni

South Africa . 89 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the TIES36 by Texas Instruments. Crafted with precision and expertise, this Infrared LED offers unparalleled performance and reliability. From enhancing security systems to revolutionizing remote control devices, the TIES36 is the ultimate solution for all your infrared lighting needs. Experience the exceptional quality and value that only Texas Instruments can deliver, and take your projects to new heights with the TIES36.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

The high maximum forward current capability allows for reliable and efficient performance of the Infrared LED, ensuring optimal brightness and longevity.

Peak Wavelength (nm): 910

The specific peak wavelength of 910nm makes this Infrared LED suitable for various applications such as remote controls, security systems, and proximity sensors.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this Infrared LED can withstand high temperatures, making it ideal for industrial and automotive applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures that the Infrared LED can function effectively in cold environments or during temperature fluctuations.

Maximum Reverse Voltage: 2 V

The maximum reverse voltage of 2V provides protection against voltage spikes and ensures the reliability of the Infrared LED under varying conditions.

Semiconductor Material: GaAs

The use of Gallium Arsenide (GaAs) semiconductor material in this Infrared LED ensures high efficiency, reliability, and stability in performance.

Viewing Angle: 25°

The wide viewing angle of 25° allows for a broader coverage area, making the Infrared LED suitable for applications requiring a wider detection range.

Spectral Bandwidth: 30 m

The narrow spectral bandwidth of 30m enhances the accuracy and precision of the emitted infrared light, making this LED ideal for applications that require specific wavelength requirements.

Maximum Forward Voltage: 2 V

The low maximum forward voltage of 2V helps in reducing power consumption and heat generation, making this Infrared LED energy-efficient and cost-effective.

Technical Specifications

Infrared LEDs TIES36 attributes and parameters. Explore more Infrared LEDs devices from Texas Instruments

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2 V

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Peak Wavelength (nm):

910

Maximum Reverse Voltage:

2 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

30 m

Sub-Category:

Infrared LEDs

Viewing Angle:

25 deg

Trade Compliance

TIES36 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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