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TIES496

Texas Instruments

TIES496 by Texas Instruments

TIES496 by Texas Instruments is an Infrared LED with peak wavelength of 860nm, GaAlAs semiconductor material, and 20° viewing angle. It operates b/w -40°C to 85°C, has a response time of 0.00000002s, and max forward current of 0.06A. Ideal for applications requiring precise infrared illumination in a through hole mount setup.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,283 parts In-Stock

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Digiode

USA . 2,104 parts In-Stock

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2,104

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Parana Technologies

USA . 1,825 parts In-Stock

1+ parts

$0.569

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$1.663

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1,825

$0.569

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$1.663

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DigiPath Technology Company

USA . 631 parts In-Stock

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$0.626

100+ parts

$0.576

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631

$0.626

$0.576

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ChromeModa Solutions

Germany . 817 parts In-Stock

1+ parts

$0.639

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$0.524

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817

$0.639

$0.524

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IDEA Electronic Components Group

UK . 299 parts In-Stock

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$0.639

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$0.575

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299

$0.639

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$0.575

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One Stop Electronics

USA . 318 parts In-Stock

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$3.100

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318

$3.100

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Ampacity Inc.

Singapore . 533 parts In-Stock

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$6.100

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533

$6.100

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AZTECH Wire

Italy . 448 parts In-Stock

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$12.801

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$12.801

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Semicontronic

India . 311 parts In-Stock

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$13.100

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$12.772

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$12.707

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311

$13.100

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Corphita

USA . 3,047 parts In-Stock

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Corohmni

South Africa . 321 parts In-Stock

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Overview

Elevate your infrared LED experience with the TIES496 by Texas Instruments. Crafted with precision and expertise, this high-quality component offers unmatched reliability and performance. Ideal for a variety of applications, from remote controls to motion sensors, the TIES496 delivers exceptional value with its fast response time, wide viewing angle, and low forward voltage. Trust in Texas Instruments for superior technology that meets your needs effortlessly.

Feature Benefit Bullets

Maximum Forward Current: 0.06 A

With a high maximum forward current, this product can provide a strong and consistent output, making it suitable for various applications requiring reliable performance.

Peak Wavelength (nm): 860

The peak wavelength of 860 nm ensures that this infrared LED is optimized for specific applications requiring this specific wavelength, enhancing its effectiveness.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows this product to function well in a wide range of environmental conditions without risk of overheating or performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C means this product can still operate effectively in cold environments, making it versatile for various applications.

Maximum Response Time: 0.00000002 s

With an extremely fast maximum response time, this product can provide quick and accurate output, making it ideal for applications requiring rapid and precise measurements or detections.

Maximum Reverse Voltage: 2 V

The low maximum reverse voltage of 2 V adds a level of protection to the LED, ensuring its durability and longevity in case of reverse voltage occurrences.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this product offers high efficiency and reliability, contributing to its overall performance and longevity.

Viewing Angle: 20°

The 20° viewing angle provides a focused and directional output, making this LED suitable for applications where precise targeting or illumination is required.

Spectral Bandwidth: 40 m

With a spectral bandwidth of 40 m, this product can be used in applications requiring specific bandwidth ranges, ensuring accurate and effective performance.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes installation and integration of this LED easy and secure, enhancing its usability in various electronic projects or devices.

Maximum Forward Voltage: 1.8 V

With a low maximum forward voltage requirement of 1.8 V, this LED can operate efficiently while consuming minimal power, making it a cost-effective choice for energy-conscious applications.

Technical Specifications

Infrared LEDs TIES496 attributes and parameters. Explore more Infrared LEDs devices from Texas Instruments

Specs

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.8 V

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Peak Wavelength (nm):

860

Maximum Response Time:

.00000002 s

Maximum Reverse Voltage:

2 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

40 m

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

TIES496 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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