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SLR881C

Onsemi

SLR881C by Onsemi

SLR881C by Onsemi is an Infrared LED with peak wavelength of 880nm, forward current of 0.1A, and response time of 0.0000006s. Ideal for applications requiring a viewing angle of 30°, spectral bandwidth of 65m, and operating temperatures from -25 °C to 80°C.

Median Price

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Lifecycle Status

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Digiode

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TANS Electronics

Latvia . 5,189 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Corphita

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Problanco Electronics

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UHIMA Technologies

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Overview

Illuminate your world with the SLR881C by Onsemi, a top-quality Infrared LED that offers unrivaled performance and reliability. Manufactured by the renowned Onsemi, this cutting-edge product boasts a peak wavelength of 880nm and a viewing angle of 30°, making it ideal for a wide range of applications. Whether you're in need of superior infrared illumination for security systems, remote controls, or medical equipment, the SLR881C delivers exceptional value, efficiency, and precision. Upgrade to the SLR881C today and experience the difference!

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

Allows for high current flow, ensuring optimal performance and brightness of the infrared LEDs.

Peak Wavelength (nm): 880

Offers a specific wavelength for efficient infrared transmission and detection in various applications.

Maximum Operating Temperature: 80 °C

Can withstand high temperatures, making the LEDs suitable for diverse environmental conditions.

Minimum Operating Temperature: -25 °C

Capable of operating in cold temperatures without compromising performance.

Maximum Response Time: 0.0000006 s

Provides quick response time, ideal for applications requiring rapid infrared signal transmission.

Maximum Reverse Voltage: 5 V

Offers protection against reverse voltage, ensuring long-term reliability of the infrared LEDs.

Semiconductor Material: GaAlAs

GaAlAs material provides high efficiency and reliability in infrared LED performance.

Viewing Angle: 30°

Wide viewing angle allows for broader coverage and detection range in infrared applications.

Spectral Bandwidth: 65 m

Narrow spectral bandwidth enhances the accuracy and precision of infrared signal transmission.

Mounting Feature: THROUGH HOLE MOUNT

Ease of installation and secure mounting for stability in various applications.

Maximum Forward Voltage: 2 V

Low forward voltage helps in conserving power and optimizing energy efficiency in the system.

Technical Specifications

Infrared LEDs SLR881C attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

2 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

880

Maximum Response Time:

.0000006 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Spectral Bandwidth:

65 m

Sub-Category:

Infrared LEDs

Viewing Angle:

30 deg

Trade Compliance

SLR881C Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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