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SLR989A7

Onsemi

SLR989A7 by Onsemi

SLR989A7 by Onsemi is an Infrared LED with a peak wavelength of 945nm, forward current of 0.1A, and viewing angle of 20°. It operates b/w -25 °C to 80°C and has a response time of 0.000001s. Ideal for applications requiring fast and precise infrared illumination in a compact form factor.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 2,298 parts In-Stock

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Digiode

USA . 756 parts In-Stock

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Problanco Electronics

Mexico . 8,140 parts In-Stock

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SupplyDigital Components

Austria . 6,214 parts In-Stock

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TANS Electronics

Latvia . 5,328 parts In-Stock

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Kulean Microsystems

USA . 3,502 parts In-Stock

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UHIMA Technologies

Türkiye . 619 parts In-Stock

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Corphita

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Corohmni

South Africa . 114 parts In-Stock

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Overview

Illuminate your world with the SLR989A7 Infrared LED by Onsemi. Known for their commitment to quality and innovation, Onsemi delivers cutting-edge technology that exceeds industry standards. The SLR989A7 is perfect for a wide range of applications, from security systems to medical devices. With its peak wavelength of 945nm and maximum response time of 0.000001s, this LED offers unparalleled performance and reliability. Trust Onsemi to light up your life with the SLR989A7.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

Ensures safe and efficient operation of the infrared LED.

Peak Wavelength (nm): 945

Ideal for applications that require emission of infrared light at a specific wavelength.

Maximum Operating Temperature: 80 °C

Allows for operation in high-temperature environments without compromising performance.

Minimum Operating Temperature: -25 °C

Suitable for use in a wide range of temperature conditions.

Maximum Response Time: 0.000001 s

Provides rapid response for applications that require quick activation or deactivation.

Maximum Reverse Voltage: 5 V

Protects the infrared LED from reverse voltage damage.

Semiconductor Material: GaAs

GaAs is known for its high efficiency and reliability in infrared LED applications.

Viewing Angle: 20°

Offers a wide viewing angle for better coverage in applications requiring infrared illumination.

Spectral Bandwidth: 45 m

Provides a narrow bandwidth for more precise control of emitted infrared light.

Mounting Feature: THROUGH HOLE MOUNT

Facilitates easy and secure mounting of the infrared LED onto a circuit board or other surfaces.

Maximum Forward Voltage: 1.5 V

Helps minimize power consumption while delivering optimal performance.

Technical Specifications

Infrared LEDs SLR989A7 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Response Time:

.000001 s

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Spectral Bandwidth:

45 m

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR989A7 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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