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SLR738A10

Onsemi

SLR738A10 by Onsemi

SLR738A10 by Onsemi is an Infrared LED with peak wavelength of 850nm, max forward current of 0.1A, and reverse voltage of 3V. Ideal for applications requiring IR illumination in temp range -25 °C to 80°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,090 parts In-Stock

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Vyrian

USA . 1,206 parts In-Stock

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Kulean Microsystems

USA . 7,190 parts In-Stock

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TANS Electronics

Latvia . 5,351 parts In-Stock

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Problanco Electronics

Mexico . 4,728 parts In-Stock

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SupplyDigital Components

Austria . 3,321 parts In-Stock

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Corphita

USA . 1,429 parts In-Stock

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UHIMA Technologies

Türkiye . 261 parts In-Stock

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Corohmni

South Africa . 95 parts In-Stock

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Overview

Illuminate your world with the SLR738A10 by Onsemi, a cutting-edge Infrared LED that sets a new standard in quality and performance. Manufactured by the renowned Onsemi, this powerful component boasts peak wavelength of 850nm and maximum forward current of 0.1 A, making it perfect for a wide range of applications. Whether you're enhancing security systems or improving automation processes, this reliable LED delivers exceptional value, efficiency, and precision. Upgrade to the SLR738A10 today and experience the difference in lighting technology.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This ensures that the LED can handle a high current without being damaged, making it reliable and long-lasting.

Peak Wavelength (nm): 850

The peak wavelength of 850nm makes this LED suitable for various applications such as remote controls, security systems, and data transmission.

Maximum Operating Temperature: 80 °C

With a maximum operating temperature of 80 °C, this LED can function effectively even in high-temperature environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C ensures that this LED can also operate in cold environments without any issues.

Maximum Reverse Voltage: 3 V

The maximum reverse voltage of 3V protects the LED from damage in case of reverse polarity connection, increasing its durability.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this LED results in high efficiency and reliability, offering consistent performance over time.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely install and connect the LED, ensuring stable operation in various applications.

Technical Specifications

Infrared LEDs SLR738A10 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Semiconductor Material:

GaAlAs

Sub-Category:

Infrared LEDs

Trade Compliance

SLR738A10 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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