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SLR732A

Onsemi

SLR732A by Onsemi

SLR732A by Onsemi is an Infrared LED with peak wavelength of 830nm. It has a max forward current of 0.1A and reverse voltage of 5V. Ideal for applications requiring IR illumination in temp range -25 °C to 80°C, using GaAlAs semiconductor material with through hole mount feature.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,987 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 5,911 parts In-Stock

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Kepictronics

USA . 5,500 parts In-Stock

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Kulean Microsystems

USA . 4,219 parts In-Stock

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Corphita

USA . 2,409 parts In-Stock

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TANS Electronics

Latvia . 2,010 parts In-Stock

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SupplyDigital Components

Austria . 1,595 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Corohmni

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Overview

Illuminate your world with the SLR732A from Onsemi, a leading manufacturer of high-quality Infrared LEDs. Perfect for a wide range of applications, this cutting-edge product offers peak wavelength of 830nm, maximum forward current of 0.1A, and exceptional performance in temperatures ranging from -25 °C to 80°C. With a maximum reverse voltage of 5V and GaAlAs semiconductor material, this THROUGH HOLE MOUNT LED delivers unparalleled value and benefits to customers looking for reliability and precision in their infrared lighting needs. Experience the difference with Onsemi's SLR732A.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

With a high maximum forward current, this product can handle higher power requirements and operate efficiently without risk of overheating.

Peak Wavelength (nm): 830

The peak wavelength of 830 nm ensures that this infrared LED emits light in a range that is ideal for various applications including remote controls, night vision, and optical sensors.

Maximum Operating Temperature: 80 °C

This product can withstand high temperatures up to 80 °C, making it suitable for use in environments where heat may be a concern.

Minimum Operating Temperature: -25 °C

With a low minimum operating temperature of -25 °C, this infrared LED can function effectively in cold environments without risk of damage or malfunction.

Maximum Reverse Voltage: 5 V

The maximum reverse voltage of 5V ensures that this LED is protected against reverse polarity, providing added durability and reliability.

Semiconductor Material: GaAlAs

The use of GaAlAs semiconductor material in this LED enhances its performance and efficiency, making it a reliable choice for various infrared applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy installation and secure placement of this LED on circuit boards or other surfaces, simplifying the assembly process.

Technical Specifications

Infrared LEDs SLR732A attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

830

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAlAs

Sub-Category:

Infrared LEDs

Trade Compliance

SLR732A Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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