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SLR738AV60

Onsemi

SLR738AV60 by Onsemi

SLR738AV60 by Onsemi is an Infrared LED with 0.1A max forward current, emitting at 850nm peak wavelength. Operating temp ranges from -25 °C to 80°C. Ideal for applications requiring a viewing angle of 26°, with a max reverse voltage of 3V and through-hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,869 parts In-Stock

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Vyrian

USA . 1,800 parts In-Stock

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Problanco Electronics

Mexico . 4,696 parts In-Stock

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TANS Electronics

Latvia . 3,629 parts In-Stock

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SupplyDigital Components

Austria . 3,486 parts In-Stock

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Kulean Microsystems

USA . 2,939 parts In-Stock

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Corphita

USA . 1,994 parts In-Stock

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UHIMA Technologies

Türkiye . 369 parts In-Stock

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Corohmni

South Africa . 342 parts In-Stock

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Overview

Illuminate your world with the Onsemi SLR738AV60! Crafted by a trusted manufacturer, this high-quality Infrared LED offers peak performance in a compact package. Ideal for applications like security systems, remote control devices, and proximity sensors, this LED provides reliable and efficient lighting solutions. With a maximum forward current of 0.1A and a peak wavelength of 850nm, this LED is designed to deliver exceptional results. Experience the value and benefits of superior illumination with the Onsemi SLR738AV60.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

The low maximum forward current ensures energy efficiency and long-lasting performance of the infrared LED.

Peak Wavelength (nm): 850

The peak wavelength of 850nm makes this infrared LED suitable for various applications such as remote controls, security systems, and communication devices.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature of 80 °C, this infrared LED can withstand harsh environmental conditions and maintain reliable performance.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C ensures that this infrared LED can function even in cold environments.

Maximum Reverse Voltage: 3 V

The maximum reverse voltage of 3V provides protection against reverse polarity and ensures the stability of the infrared LED.

Viewing Angle: 26°

The wide viewing angle of 26° allows for better coverage and distribution of infrared light, making this LED suitable for various lighting applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount design of this infrared LED facilitates easy installation and secure mounting on circuit boards or other surfaces.

Maximum Forward Voltage: 1.6 V

The low maximum forward voltage of 1.6V ensures efficient power consumption and helps prolong the lifespan of the infrared LED.

Technical Specifications

Infrared LEDs SLR738AV60 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.6 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

26 deg

Trade Compliance

SLR738AV60 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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