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SLR738AV50

Onsemi

SLR738AV50 by Onsemi

SLR738AV50 by Onsemi is an Infrared LED with 0.1A max forward current, 850nm peak wavelength, and 26° viewing angle. Ideal for applications requiring IR illumination in a temperature range of -25 °C to 80°C.

Median Price

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Lifecycle Status

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Austria . 7,033 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 981 parts In-Stock

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Kulean Microsystems

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Corohmni

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Problanco Electronics

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Overview

Illuminate your world with the SLR738AV50 by Onsemi, a top-of-the-line Infrared LED that delivers unparalleled quality and reliability. Designed by industry-leading experts, this powerful component is perfect for a wide range of applications, from security cameras to proximity sensors. With a peak wavelength of 850nm and a maximum forward current of 0.1A, this LED offers exceptional performance in any situation. Trust Onsemi to provide cutting-edge technology that brings value and benefits to every customer. Elevate your projects with the SLR738AV50 today!

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

With a high maximum forward current, this Infrared LED can handle higher power levels, ensuring reliable performance in demanding applications.

Peak Wavelength (nm): 850

The peak wavelength of 850 nm makes this Infrared LED suitable for various applications such as remote controls, security systems, and night vision devices.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C ensures that this Infrared LED can withstand elevated temperatures, making it suitable for a wide range of environments.

Minimum Operating Temperature: -25 °C

With a low minimum operating temperature of -25 °C, this Infrared LED can function effectively even in cold conditions, increasing its versatility.

Maximum Reverse Voltage: 3 V

The maximum reverse voltage of 3 V protects the LED from potential damage due to reverse polarity, enhancing its durability and reliability.

Viewing Angle: 26°

The wide viewing angle of 26° allows for better coverage and visibility, making this Infrared LED suitable for applications requiring broad illumination.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process, providing a secure and stable mounting option for the Infrared LED.

Maximum Forward Voltage: 1.5 V

With a low maximum forward voltage of 1.5 V, this Infrared LED offers efficient power consumption while maintaining high performance, making it an energy-efficient choice.

Technical Specifications

Infrared LEDs SLR738AV50 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

850

Maximum Reverse Voltage:

3 V

Sub-Category:

Infrared LEDs

Viewing Angle:

26 deg

Trade Compliance

SLR738AV50 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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