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SLR938C7

Onsemi

SLR938C7 by Onsemi

SLR938C7 by Onsemi is an Infrared LED with peak wavelength of 945nm, max forward current of 0.1A, and viewing angle of 20°. Ideal for applications requiring IR illumination in a temperature range from -25 °C to 80°C.

Median Price

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3

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1k+

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ACDS - Activité Composants Distribution Service

France . 9,000 parts In-Stock

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Digiode

USA . 795 parts In-Stock

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Vyrian

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Perfect Parts

USA . 20,160 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 9,000 parts In-Stock

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Glotronic Ltd.

UK . 7,200 parts In-Stock

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Problanco Electronics

Mexico . 6,909 parts In-Stock

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Kulean Microsystems

USA . 6,087 parts In-Stock

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TANS Electronics

Latvia . 3,965 parts In-Stock

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UHIMA Technologies

Türkiye . 562 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 346 parts In-Stock

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Corohmni

South Africa . 209 parts In-Stock

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Overview

Elevate your infrared LED game with the SLR938C7 by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers top-notch products that exceed industry standards. The SLR938C7 is perfect for a wide range of applications, offering unmatched performance and reliability. With a peak wavelength of 945 nm and a maximum forward current of 0.1 A, this infrared LED provides exceptional value and benefits to customers. Illuminate your projects with precision and efficiency with the SLR938C7 from Onsemi.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This product has a high maximum forward current, allowing it to generate bright and reliable infrared light output.

Peak Wavelength (nm): 945

With a peak wavelength of 945nm, this product is optimized for applications requiring specific infrared light output at that wavelength.

Maximum Operating Temperature: 80 °C

The high maximum operating temperature of 80 °C ensures that this product can perform reliably in a wide range of operating conditions.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25 °C allows this product to be used in cold environments without compromising performance.

Maximum Reverse Voltage: 5 V

With a maximum reverse voltage of 5V, this product is protected against reverse polarity and overvoltage situations, ensuring its longevity and reliability.

Semiconductor Material: GaAs

The use of GaAs semiconductor material in this product provides high efficiency and reliability in generating infrared light.

Viewing Angle: 20°

The 20° viewing angle of this product allows for focused and directed infrared light output, making it suitable for specific applications requiring precise illumination.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure placement of the product, making it easy to integrate into various electronic devices.

Technical Specifications

Infrared LEDs SLR938C7 attributes and parameters. Explore more Infrared LEDs devices from Onsemi

Specs

Maximum Forward Current:

.1 A

Mounting Feature:

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-25 Cel

Peak Wavelength (nm):

945

Maximum Reverse Voltage:

5 V

Semiconductor Material:

GaAs

Sub-Category:

Infrared LEDs

Viewing Angle:

20 deg

Trade Compliance

SLR938C7 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.20.00

SB

8541.40.20.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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