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NV25010DWVFT3G

Onsemi

NV25010DWVFT3G by Onsemi

NV25010DWVFT3G by Onsemi is an EEPROM with 128x8 organization, operating at 5V. It features a max clock frequency of 20 MHz and SPI serial bus type. Ideal for automotive applications due to its temperature grade and small outline package style.

Median Price

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Lifecycle Status

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2

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1k+

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USA . 596 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 6,725 parts In-Stock

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Kulean Microsystems

USA . 5,962 parts In-Stock

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SupplyDigital Components

Austria . 4,392 parts In-Stock

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Corphita

USA . 1,519 parts In-Stock

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Unlock endless possibilities with the NV25010DWVFT3G by Onsemi. Crafted with precision and reliability in mind, this EEPROM device offers unparalleled quality and performance. Ideal for automotive applications, this small outline package is designed to withstand even the harshest conditions. With a maximum clock frequency of 20 MHz and a memory density of 1024 bits, this product provides lightning-fast data transfer and ample storage capacity. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the NV25010DWVFT3G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the EEPROM, ensuring longevity and ease of handling.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Operating Mode: SYNCHRONOUS

Facilitates precise and synchronized data transfers, ensuring reliability and efficiency.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that is widely compatible with various systems and applications.

Organization: 128X8

Offers a good balance between memory capacity and data width, suitable for many applications.

Maximum Operating Temperature: 125 °C

Can operate in high temperature environments, making it suitable for automotive and industrial applications.

Technology: CMOS

Utilizes low power CMOS technology for efficient operation and minimal power consumption.

Serial Bus Type: SPI

Uses SPI interface for high-speed serial communication, enabling fast data transfer rates.

Memory Density: 1024 bit

Offers a decent amount of memory storage for storing configuration or calibration data.

Technical Specifications

EEPROM NV25010DWVFT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 2.5 TO 4.5V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

NV25010DWVFT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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