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NV25010DWVLT3G

Onsemi

NV25010DWVLT3G by Onsemi

NV25010DWVLT3G by Onsemi is an AEC-Q100 EEPROM with 128x8 organization, 20 MHz clock frequency, and 4000000 write/erase cycles. Ideal for automotive applications, it operates at -40 to 125 °C with a supply voltage range of 1.7-5.5 V.

Median Price

$0.376

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,396 parts In-Stock

1+ parts

$0.520

100+ parts

$0.459

1k+ parts

$0.425

10k+ parts

$0.381

2,396

$0.520

$0.459

$0.425

$0.381

DigiKey

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.360

96,000

-

-

-

$0.360

Flip Electronics (Authorized)

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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96,000

-

-

-

-

Rochester

USA . 2,900 parts In-Stock

1+ parts

-

100+ parts

$0.348

1k+ parts

$0.289

10k+ parts

$0.258

2,900

-

$0.348

$0.289

$0.258

Verical

USA . 2,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.392

10k+ parts

$0.322

2,900

-

-

$0.392

$0.322

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,551 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

-

10k+ parts

-

1,551

$0.450

-

-

-

Digiode

USA . 1,308 parts In-Stock

1+ parts

$0.513

100+ parts

-

1k+ parts

-

10k+ parts

-

1,308

$0.513

-

-

-

Flip Electronics

USA . 147,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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147,000

-

-

-

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DigiKey Marketplace

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.450

10k+ parts

-

96,000

-

-

$0.450

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 164 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

-

10k+ parts

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164

$0.450

-

-

-

Corphita

USA . 1,222 parts In-Stock

1+ parts

$0.486

100+ parts

-

1k+ parts

-

10k+ parts

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1,222

$0.486

-

-

-

Problanco Electronics

Mexico . 6,383 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6,383

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-

-

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Kulean Microsystems

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,000

-

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TANS Electronics

Latvia . 3,465 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,465

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SupplyDigital Components

Austria . 753 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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753

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UHIMA Technologies

Türkiye . 568 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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568

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-

-

-

Overview

Unlock the potential of your automotive applications with the NV25010DWVLT3G EEPROM by Onsemi. This high-quality memory IC offers 128x8 organization, 3-STATE output characteristics, and 20 MHz maximum clock frequency in a compact small outline package. With endurance for 4,000,000 write/erase cycles and hardware/software write protection, this EEPROM ensures reliability and security. Ideal for automotive use with AEC-Q100 screening, this Onsemi product provides unmatched value, benefits, and advantages to customers looking for durable and efficient memory solutions. Trust Onsemi for cutting-edge technology that enhances your products and drives innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection to the internal components of the EEPROM.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and making it suitable for automated assembly processes.

Screening Level: AEC-Q100

Meets strict automotive industry standards for reliability and performance, making it suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply that is compatible with most electronic systems.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high-temperature environments, ensuring reliable performance in various conditions.

Organization: 128X8

Offering a decent memory organization for storing data efficiently.

Output Characteristics: 3-STATE

Allows for multiple devices to share the same bus, increasing flexibility in system design.

Write Protection: HARDWARE/SOFTWARE

Provides options for securing data with both hardware and software-level protection, enhancing data security.

Technology: CMOS

Offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Endurance: 4000000 Write/Erase Cycles

High endurance rating ensures longevity and reliability for frequent read/write operations.

Serial Bus Type: SPI

Utilizes Serial Peripheral Interface for communication, enabling easy integration with a wide range of microcontrollers and systems.

Technical Specifications

EEPROM NV25010DWVLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

4000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

NV25010DWVLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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