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NV25020UVLT2G

Onsemi

NV25020UVLT2G by Onsemi

NV25020UVLT2G by Onsemi is an AEC-Q100 EEPROM with 256x8 organization, 2048 bit memory density, and SPI serial bus type. Operating at -40 to 125 °C, it offers 4000000 write/erase cycles for automotive applications. With a package size of 2.3mm x 2mm and 0.9mm height, this CMOS technology device has a max clock frequency of 20 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,170 parts In-Stock

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2,170

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Digiode

USA . 1,260 parts In-Stock

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1,260

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Distributors (Availability)

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Ampacity Inc.

Singapore . 283 parts In-Stock

1+ parts

$12.000

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283

$12.000

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TANS Electronics

Latvia . 7,123 parts In-Stock

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7,123

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SupplyDigital Components

Austria . 4,434 parts In-Stock

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4,434

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Kulean Microsystems

USA . 3,901 parts In-Stock

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3,901

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Problanco Electronics

Mexico . 1,250 parts In-Stock

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1,250

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Corphita

USA . 639 parts In-Stock

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639

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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245

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Corohmni

South Africa . 140 parts In-Stock

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Overview

Discover the NV25020UVLT2G by Onsemi - a high-quality EEPROM that offers unmatched reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this EEPROM is perfect for automotive applications due to its AEC-Q100 screening level. With a small outline, very thin profile package style, and 3-state output characteristics, this EEPROM provides maximum flexibility and functionality. Benefit from its 4 million write/erase cycles, SPI serial bus type, and 200 years of data retention time. Enhance your automotive projects with the NV25020UVLT2G and experience the quality and value that Onsemi products bring to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for package body ensures the longevity and reliability of the EEPROM.

Surface Mount: YES

Surface mount capability makes it easy to integrate this EEPROM into various electronic circuit designs.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures that the EEPROM meets automotive industry standards for quality and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Operating at 5V supply voltage provides stable performance and compatibility with many systems.

Write Protection: HARDWARE/SOFTWARE

Multiple write protection options offer flexibility and security for the stored data in the EEPROM.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature tolerance ensures reliable operation in harsh environmental conditions.

Endurance: 4000000 Write/Erase Cycles

High endurance rating of 4,000,000 write/erase cycles ensures longevity and reliability of the EEPROM.

Serial Bus Type: SPI

Serial Peripheral Interface (SPI) allows for easy communication with other devices in the system.

Technical Specifications

EEPROM NV25020UVLT2G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

4000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

2.3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.9 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

NV25020UVLT2G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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