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NV25010MUW3VLT3G

Onsemi

NV25010MUW3VLT3G by Onsemi

NV25010MUW3VLT3G by Onsemi is an AEC-Q100 EEPROM with 128x8 organization, 20 MHz clock frequency, and 4000000 write/erase cycles. Ideal for automotive applications requiring a small outline package with synchronous operation and SPI serial bus type.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 842 parts In-Stock

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Vyrian

USA . 355 parts In-Stock

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SupplyDigital Components

Austria . 4,286 parts In-Stock

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TANS Electronics

Latvia . 3,900 parts In-Stock

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Kulean Microsystems

USA . 2,743 parts In-Stock

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Corphita

USA . 2,371 parts In-Stock

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UHIMA Technologies

Türkiye . 416 parts In-Stock

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Problanco Electronics

Mexico . 275 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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Overview

Enhance your automotive electronics with the NV25010MUW3VLT3G by Onsemi. Known for their high-quality products, Onsemi delivers reliable EEPROM solutions for a variety of applications in the automotive industry. With a focus on durability and performance, this EEPROM offers customers value through its long-lasting endurance, fast operation, and secure write protection features. Upgrade your system with the trusted technology of Onsemi and experience seamless integration and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM chip inside, ensuring a longer lifespan for the product.

Package Shape: RECTANGULAR

The rectangular shape allows for easier integration into various electronic devices and circuit designs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures consistent and reliable data transfer, making it ideal for applications where timing is critical.

Nominal Supply Voltage (Vsup): 5V

A common and stable supply voltage that is widely available and compatible with many electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, suitable for automotive and industrial applications where heat resistance is essential.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance, making the EEPROM energy-efficient and fast.

Memory Density: 1024 bit

Provides sufficient storage capacity for storing critical data or program codes in a small footprint.

Endurance: 4000000 Write/Erase Cycles

With a high number of write/erase cycles, this EEPROM is durable and can handle frequent data updates without wearing out quickly.

Technical Specifications

EEPROM NV25010MUW3VLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

4000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

NV25010MUW3VLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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