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NV25020DTVFT3G

Onsemi

NV25020DTVFT3G by Onsemi

NV25020DTVFT3G by Onsemi is an EEPROM with 256x8 organization, operating at 5V. It features a max clock frequency of 20MHz and serial bus type SPI. Ideal for automotive applications due to its temperature grade and thin profile package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,590 parts In-Stock

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Digiode

USA . 280 parts In-Stock

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280

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Kulean Microsystems

USA . 5,955 parts In-Stock

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SupplyDigital Components

Austria . 5,468 parts In-Stock

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Problanco Electronics

Mexico . 4,957 parts In-Stock

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TANS Electronics

Latvia . 3,886 parts In-Stock

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Corphita

USA . 1,061 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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UHIMA Technologies

Türkiye . 139 parts In-Stock

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Overview

Unlock a world of seamless data storage and retrieval with the NV25020DTVFT3G by Onsemi. This high-quality EEPROM offers reliable performance in automotive applications, ensuring your data is always accessible when you need it most. With a compact design and advanced technology, this EEPROM is the perfect solution for your data storage needs. Trust Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds your expectations. Experience the value and benefits of the NV25020DTVFT3G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the EEPROM, ensuring reliable performance in various environmental conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination between the EEPROM and the system it is connected to, enhancing data transfer efficiency.

Maximum Clock Frequency: 20 MHz

High clock frequency enables fast data transfer rates, making this EEPROM suitable for applications requiring quick access to stored information.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards, this EEPROM is built to withstand temperature fluctuations and harsh conditions commonly found in automotive environments.

Parallel or Serial: SERIAL

Serial interface simplifies connection to microcontrollers and other devices, allowing for efficient communication and control within a system.

Technical Specifications

EEPROM NV25020DTVFT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 2.5 TO 4.5V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

NV25020DTVFT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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