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NV25020MUW3VFT3G

Onsemi

NV25020MUW3VFT3G by Onsemi

NV25020MUW3VFT3G by Onsemi is a 256x8 EEPROM with SPI serial bus, operating at 20MHz. With a supply voltage range of 4.5V to 5.5V, it's ideal for automotive applications due to its -40 °C to 125°C temperature grade. This small outline package has a very thin profile and is surface mountable, making it suitable for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,384 parts In-Stock

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Digiode

USA . 1,693 parts In-Stock

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Kulean Microsystems

USA . 1,181 parts In-Stock

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SupplyDigital Components

Austria . 1,114 parts In-Stock

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Problanco Electronics

Mexico . 922 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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Corohmni

South Africa . 244 parts In-Stock

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TANS Electronics

Latvia . 164 parts In-Stock

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Corphita

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Overview

Unlock the power of reliable data storage with the NV25020MUW3VFT3G by Onsemi. Known for their top-notch quality and innovative technology, Onsemi brings you a cutting-edge EEPROM that is perfect for automotive applications. With a compact design and high operating temperature range, this memory IC offers unparalleled performance and durability. Say goodbye to data loss and hello to seamless operation with the NV25020MUW3VFT3G. Elevate your projects with this superior product from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to damage, ensuring the longevity of the EEPROM product.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Enables efficient and synchronized data transfer, improving overall performance of the EEPROM.

Nominal Supply Voltage (Vsup): 5V

Provides a stable power source for the EEPROM, ensuring reliable operation.

Maximum Operating Temperature: 125 °C

Suitable for use in automotive applications where high temperatures may be encountered.

Organization: 256X8

Offers a good balance between memory capacity and data retrieval speed, ideal for various applications.

Parallel or Serial: SERIAL

Enables efficient data transfer and easy integration with other serial devices in the circuit.

Maximum Clock Frequency (fCLK): 20 MHz

Allows for fast data transfer speeds, making the EEPROM suitable for applications requiring quick read/write operations.

Memory Density: 2048 bit

Provides ample storage capacity for storing data in various applications.

Serial Bus Type: SPI

SPI interface offers a simple and efficient communication protocol, enhancing the versatility of the EEPROM.

Technical Specifications

EEPROM NV25020MUW3VFT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 2.5 TO 4.5V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.55 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

NV25020MUW3VFT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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