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NV25020DWVLT3G

Onsemi

NV25020DWVLT3G by Onsemi

NV25020DWVLT3G by Onsemi is an AEC-Q100 EEPROM with 256x8 organization, operating at 5V. It features a max clock frequency of 20MHz and endurance of 4M cycles. Ideal for automotive applications requiring reliable data storage in a compact, surface-mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,306 parts In-Stock

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Digiode

USA . 748 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$6.294

100+ parts

$5.728

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$5.161

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1,000

$6.294

$5.728

$5.161

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TANS Electronics

Latvia . 3,838 parts In-Stock

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Problanco Electronics

Mexico . 3,300 parts In-Stock

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SupplyDigital Components

Austria . 2,360 parts In-Stock

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Corphita

USA . 2,351 parts In-Stock

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Kulean Microsystems

USA . 853 parts In-Stock

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UHIMA Technologies

Türkiye . 844 parts In-Stock

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Corohmni

South Africa . 326 parts In-Stock

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Overview

Unlock the power of reliable data storage with the NV25020DWVLT3G by Onsemi. This high-quality EEPROM offers unmatched durability and performance, making it ideal for automotive applications where precision and longevity are essential. With a 4000000 Write/Erase Cycle Endurance, this memory IC ensures data integrity for years to come. Say goodbye to worries about data loss or corruption with the NV25020DWVLT3G - the perfect solution for your automotive electronics needs. Trust Onsemi for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort during assembly.

Screening Level: AEC-Q100

Ensures high reliability and quality, making it suitable for automotive applications where stringent standards need to be met.

Package Shape: RECTANGULAR

Standard shape that fits well on most PCB layouts, making it easy to integrate into various electronic devices.

Nominal Supply Voltage: 5V

Compatible with common voltage levels in electronic systems, making it easy to power and integrate.

Operating Mode: SYNCHRONOUS

Allows for precise timing and coordination with other components, ensuring reliable data transfer and operation.

Organization: 256X8

Offers a good balance of storage capacity and data organization, suitable for various applications requiring EEPROM memory.

Output Characteristics: 3-STATE

Allows for flexible control of the output signal, enabling easy interfacing with other devices in a circuit.

Write Protection: HARDWARE/SOFTWARE

Provides security and data integrity by offering options for protecting the stored information from unauthorized access or modification.

Technology: CMOS

Low power consumption and high noise immunity, making it suitable for use in battery-powered or noise-sensitive applications.

Technical Specifications

EEPROM NV25020DWVLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

4000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

NV25020DWVLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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