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NV25010DTVFT3G

Onsemi

NV25010DTVFT3G by Onsemi

NV25010DTVFT3G by Onsemi is a 1024-bit EEPROM with SPI serial bus, operating at 20MHz clock frequency. It has a supply voltage range of 4.5V to 5.5V and can withstand temperatures from -40 °C to 125°C. Ideal for automotive applications due to its small outline package and thin profile design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,906 parts In-Stock

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Vyrian

USA . 835 parts In-Stock

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Problanco Electronics

Mexico . 8,219 parts In-Stock

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SupplyDigital Components

Austria . 7,352 parts In-Stock

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TANS Electronics

Latvia . 6,848 parts In-Stock

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Corphita

USA . 2,267 parts In-Stock

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Kulean Microsystems

USA . 1,482 parts In-Stock

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UHIMA Technologies

Türkiye . 602 parts In-Stock

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Discover the innovative NV25010DTVFT3G by Onsemi, a top-quality EEPROM that offers unparalleled reliability and performance. Manufactured by Onsemi, a trusted leader in semiconductor technology, this compact and versatile device is perfect for automotive applications. With a wide operating temperature range and high clock frequency, it ensures seamless operation in any environment. The NV25010DTVFT3G provides customers with exceptional value, benefits, and advantages, making it the ideal choice for all your memory needs. Choose Onsemi for cutting-edge technology that delivers excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM chip, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving space and facilitating production processes.

Operating Mode: SYNCHRONOUS

Enables efficient data transfer and processing, ensuring reliable and fast performance.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement for compatibility with most electronic systems.

No. of Terminals: 8

Provides necessary connectivity for integration with other components in a circuit.

Maximum Operating Temperature: 125 °C

Suitable for use in various environments including automotive applications where high temperatures can be present.

Organization: 128X8

Offers a good balance between memory capacity and data organization for efficient storage and retrieval.

Minimum Operating Temperature: -40 °C

Ensures reliable operation even in extreme cold conditions.

Maximum Clock Frequency (fCLK): 20 MHz

Supports high-speed data transfer and processing, making it suitable for demanding applications.

Memory Density: 1024 bit

Provides sufficient storage capacity for storing critical data or program code.

Technical Specifications

EEPROM NV25010DTVFT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 2.5 TO 4.5V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY

Maximum Clock Frequency (fCLK):

20 MHz

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

NV25010DTVFT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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