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NV25020MUW3VLT3G

Onsemi

NV25020MUW3VLT3G by Onsemi

NV25020MUW3VLT3G by Onsemi is an AEC-Q100 EEPROM with 256x8 organization, 20 MHz clock frequency, and 5.5 V supply voltage. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and SPI serial bus type.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,178 parts In-Stock

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Digiode

USA . 1,139 parts In-Stock

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Problanco Electronics

Mexico . 7,489 parts In-Stock

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TANS Electronics

Latvia . 5,870 parts In-Stock

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Kulean Microsystems

USA . 4,284 parts In-Stock

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Corphita

USA . 1,011 parts In-Stock

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UHIMA Technologies

Türkiye . 982 parts In-Stock

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Corohmni

South Africa . 485 parts In-Stock

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SupplyDigital Components

Austria . 251 parts In-Stock

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Overview

Experience the cutting-edge technology with the NV25020MUW3VLT3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability. This EEPROM device is perfect for automotive applications, providing secure and efficient data storage. With a compact design and a wide range of operating temperatures, this product offers unmatched versatility. Upgrade your systems with the NV25020MUW3VLT3G and enjoy seamless performance and peace of mind knowing your data is safe and easily accessible.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the EEPROM, making it suitable for various environments.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient communication and data transfer within the EEPROM, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures reliable operation of the EEPROM and compatibility with standard power sources.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

The small outline, heat sink/slug design with ultra-thin profile and shrink pitch allows for space-saving installation and efficient heat dissipation.

Memory Density: 2048 bit

High memory density of 2048 bits provides ample storage capacity for data storage and retrieval in the EEPROM.

Endurance: 4000000 Write/Erase Cycles

High endurance of 4,000,000 write/erase cycles ensures long-term reliability and durability of the EEPROM for frequent data read/write operations.

Technical Specifications

EEPROM NV25020MUW3VLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

4000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, ULTRA THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Reverse Pinout:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

NV25020MUW3VLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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