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NV25512MUW3VTBG

Onsemi

NV25512MUW3VTBG by Onsemi

NV25512MUW3VTBG by Onsemi is an AEC-Q100 EEPROM with 64KX8 organization, operating at -40 to 125 °C. It has a max clock frequency of 10 MHz and is suitable for automotive applications due to its CMOS technology and serial interface.

Median Price

$1.290

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,219 parts In-Stock

1+ parts

$1.290

100+ parts

$1.124

1k+ parts

$1.038

10k+ parts

$0.766

3,219

$1.290

$1.124

$1.038

$0.766

Mouser Electronics

USA . 2,182 parts In-Stock

1+ parts

$1.290

100+ parts

$1.130

1k+ parts

$1.040

10k+ parts

$0.798

2,182

$1.290

$1.130

$1.040

$0.798

Flip Electronics (Authorized)

USA . 12,425 parts In-Stock

1+ parts

-

100+ parts

-

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12,425

-

-

-

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Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.654

3,000

-

-

-

$0.654

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,686 parts In-Stock

1+ parts

$1.130

100+ parts

-

1k+ parts

-

10k+ parts

-

1,686

$1.130

-

-

-

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$1.722

100+ parts

-

1k+ parts

-

10k+ parts

-

23

$1.722

-

-

-

Flip Electronics

USA . 9,425 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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9,425

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-

-

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Vyrian

USA . 4,359 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,359

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,677 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

4,677

$1.010

-

-

-

Corphita

USA . 1,505 parts In-Stock

1+ parts

$1.071

100+ parts

-

1k+ parts

-

10k+ parts

-

1,505

$1.071

-

-

-

Corohmni

South Africa . 311 parts In-Stock

1+ parts

$1.190

100+ parts

-

1k+ parts

-

10k+ parts

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311

$1.190

-

-

-

Continental Prestige Electronics

USA . 6,098 parts In-Stock

1+ parts

$1.722

100+ parts

-

1k+ parts

-

10k+ parts

$1.688

6,098

$1.722

-

-

$1.688

Argo Parts USA

USA . 2,660 parts In-Stock

1+ parts

$1.722

100+ parts

-

1k+ parts

-

10k+ parts

-

2,660

$1.722

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

$1.722

100+ parts

-

1k+ parts

$1.636

10k+ parts

$1.602

50

$1.722

-

$1.636

$1.602

TANS Electronics

Latvia . 6,617 parts In-Stock

1+ parts

-

100+ parts

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6,617

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-

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-

Problanco Electronics

Mexico . 4,515 parts In-Stock

1+ parts

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100+ parts

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4,515

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-

-

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Kulean Microsystems

USA . 3,206 parts In-Stock

1+ parts

-

100+ parts

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3,206

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-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

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UHIMA Technologies

Türkiye . 180 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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180

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-

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SupplyDigital Components

Austria . 3 parts In-Stock

1+ parts

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100+ parts

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3

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-

Overview

Enhance your automotive electronics with the NV25512MUW3VTBG by Onsemi. Crafted with precision and quality, this EEPROM offers reliable performance in a compact package. Ideal for a wide range of applications, this device ensures seamless operation with its synchronous mode and high clock frequency. With a durable construction and AEC-Q100 screening level, customers can trust in the longevity and efficiency of this product. Upgrade your systems today with the value and benefits that the NV25512MUW3VTBG brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the EEPROM, ensuring durability and reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this EEPROM can be used in demanding environments without overheating.

Organization: 64KX8

This organization allows for efficient data storage and retrieval, making the EEPROM suitable for various tasks.

Minimum Operating Temperature: -40 °C

Even in extremely low temperatures, this EEPROM can still function reliably, making it versatile for use in different conditions.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this EEPROM can withstand the soldering process during manufacturing without any damage.

Technical Specifications

EEPROM NV25512MUW3VTBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

10 MHz

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

5

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

NV25512MUW3VTBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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