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NV24C128WFMUW3VTBG

Onsemi

NV24C128WFMUW3VTBG by Onsemi

NV24C128WFMUW3VTBG by Onsemi is an AEC-Q100 EEPROM with 16KX8 organization, operating at 3.3V. It features a serial I2C bus type, 1 MHz clock frequency, and -40 to 125 °C temperature range. Ideal for automotive applications requiring reliable non-volatile memory storage in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,448 parts In-Stock

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Vyrian

USA . 2,378 parts In-Stock

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TANS Electronics

Latvia . 8,029 parts In-Stock

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Kulean Microsystems

USA . 4,915 parts In-Stock

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Problanco Electronics

Mexico . 4,428 parts In-Stock

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Corphita

USA . 1,746 parts In-Stock

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Corohmni

South Africa . 357 parts In-Stock

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SupplyDigital Components

Austria . 127 parts In-Stock

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UHIMA Technologies

Türkiye . 47 parts In-Stock

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Overview

Enhance the performance of your automotive applications with the NV24C128WFMUW3VTBG EEPROM by Onsemi. This high-quality memory IC offers reliability, durability, and superior technology for seamless integration into your projects. With a wide operating temperature range and AEC-Q100 screening level, this EEPROM is designed to meet the rigorous demands of automotive environments. Trust Onsemi's expertise in semiconductor manufacturing to deliver a cutting-edge solution that ensures optimal performance and efficiency for your systems. Elevate your designs with the NV24C128WFMUW3VTBG and experience the unmatched value it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM chip inside, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Screening Level: AEC-Q100

Meets automotive industry reliability standards, making it suitable for automotive applications.

Operating Mode: SYNCHRONOUS

Enables efficient and synchronized data transfer for better performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, compatible with most electronic systems.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ideal for automotive or industrial environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and reliable operation.

Serial Bus Type: I2C

Uses I2C communication protocol for easy interfacing with other devices.

Technical Specifications

EEPROM NV24C128WFMUW3VTBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

R-PDSO-N8

Length:

3 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

2 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

NV24C128WFMUW3VTBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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