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NV24C08MUW3VTBG

Onsemi

NV24C08MUW3VTBG by Onsemi

NV24C08MUW3VTBG by Onsemi is an EEPROM with 8KX1 organization, operating at 3.3V and -40 to 125 °C temperature range. It features I2C serial bus type, 1000000 write/erase cycles endurance, and is ideal for automotive applications due to AEC-Q100 screening level.

Median Price

$0.193

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,998 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

-

10k+ parts

$0.197

2,998

$0.490

-

-

$0.197

Flip Electronics (Authorized)

USA . 93,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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93,000

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Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.179

12,000

-

-

-

$0.179

Rochester

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.193

1k+ parts

$0.160

10k+ parts

$0.143

12,000

-

$0.193

$0.160

$0.143

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 624 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

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624

$0.130

-

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Digiode

USA . 1,603 parts In-Stock

1+ parts

$0.418

100+ parts

-

1k+ parts

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10k+ parts

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1,603

$0.418

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Flip Electronics

USA . 93,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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93,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 71 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

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71

$0.156

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Corphita

USA . 467 parts In-Stock

1+ parts

$0.396

100+ parts

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1k+ parts

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10k+ parts

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467

$0.396

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Infinite Electronics LLP (Excess)

. 162,005 parts In-Stock

1+ parts

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162,005

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TANS Electronics

Latvia . 6,445 parts In-Stock

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6,445

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SupplyDigital Components

Austria . 6,151 parts In-Stock

1+ parts

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6,151

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Problanco Electronics

Mexico . 1,478 parts In-Stock

1+ parts

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100+ parts

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1,478

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UHIMA Technologies

Türkiye . 224 parts In-Stock

1+ parts

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224

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Kulean Microsystems

USA . 199 parts In-Stock

1+ parts

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199

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Overview

Unlock the power of advanced data storage with the NV24C08MUW3VTBG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their EEPROM products. Ideal for automotive applications, this EEPROM offers seamless functionality and high performance in a compact package. Experience the value of fast write cycle times, extensive endurance, and secure hardware write protection. Elevate your projects with the NV24C08MUW3VTBG and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability, making it suitable for automotive applications.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer for efficient and reliable operation.

Nominal Supply Voltage / Vsup (V): 3.3

Offers a stable voltage supply for consistent performance.

No. of Terminals: 8

Provides sufficient connectivity options for versatile usage.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Enables compact design and efficient heat dissipation, ideal for space-constrained applications.

Maximum Operating Temperature: 125 °C

Ensures reliable operation even in high-temperature environments.

Organization: 8KX1

Offers a high memory capacity for storing data efficiently.

Output Characteristics: OPEN-DRAIN

Allows for flexible output configurations to suit various circuit requirements.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions, increasing its versatility.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides corrosion resistance and excellent electrical conductivity for reliable connections.

I2C Control Byte: 1010DMMR

Utilizes I2C communication protocol for efficient data transfer.

Terminal Position: DUAL

Allows for multiple connection options, enhancing compatibility with different systems.

Write Protection: HARDWARE

Ensures data security by preventing unauthorized write access.

Maximum Seated Height: 0.55 mm

Enables low-profile design for space-saving applications.

Maximum Clock Frequency (fCLK): 0.4 MHz

Supports fast data transfer rates for efficient operation.

Width: 2 mm

Compact size allows for easy integration into various electronic devices.

Minimum Supply Voltage (Vsup): 2.5 V

Works efficiently even with low supply voltages.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for soldering without damage.

Peak Reflow Temperature °C: 260

Suitable for high-temperature soldering processes, ensuring reliable connections.

Length: 3 mm

Compact size for space-efficient placement on circuit boards.

Temperature Grade: AUTOMOTIVE

Meets automotive industry standards for reliability and performance.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation.

Parallel or Serial: SERIAL

Operates in serial mode for efficient data transfer and control.

Terminal Form: NO LEAD

Lead-free terminal form for environmental compliance and safe handling.

Maximum Supply Current: 2 mA

Low power consumption for energy-efficient operation.

No. of Words: 8192 words

Offers ample storage capacity for data retention and retrieval.

Minimum Data Retention Time: 100

Can retain data for extended periods without loss, ensuring data integrity.

Terminal Pitch: 0.5 mm

Fine pitch for precise connections and compact layout design.

No. of Words Code: 8K

Classifies the memory capacity for easy identification and integration.

Maximum Supply Voltage (Vsup): 5.5 V

Operates within a safe voltage range for reliable performance.

Endurance: 1000000 Write/Erase Cycles

High endurance for frequent write and erase operations without degradation.

Serial Bus Type: I2C

Supports I2C communication protocol for efficient data transfer and control.

Maximum Write Cycle Time (tWC): 4 ms

Quick write cycle time for fast data storage and retrieval.

Memory Density: 8192 bit

Offers high memory density for efficient data storage and access.

Memory IC Type: EEPROM

Utilizes EEPROM technology for non-volatile memory storage and retrieval.

Technical Specifications

EEPROM NV24C08MUW3VTBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DMMR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX1

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.55 mm

Serial Bus Type:

I2C

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C08MUW3VTBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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