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NV24C08SNVLT3G

Onsemi

NV24C08SNVLT3G by Onsemi

NV24C08SNVLT3G by Onsemi is an AEC-Q100 EEPROM with 1KX8 organization, 8192 bit memory density, and 1 MHz clock frequency. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high endurance of 1000000 Write/Erase cycles.

Median Price

$0.358

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,210 parts In-Stock

1+ parts

$0.430

100+ parts

$0.382

1k+ parts

$0.297

10k+ parts

$0.287

3,210

$0.430

$0.382

$0.297

$0.287

DigiKey

USA . 3,175 parts In-Stock

1+ parts

$0.430

100+ parts

$0.382

1k+ parts

$0.354

10k+ parts

$0.262

3,175

$0.430

$0.382

$0.354

$0.262

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.213

30,000

-

-

-

$0.213

Flip Electronics (Authorized)

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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9,000

-

-

-

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Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.287

1k+ parts

$0.238

10k+ parts

$0.213

3,000

-

$0.287

$0.238

$0.213

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,096 parts In-Stock

1+ parts

$0.408

100+ parts

-

1k+ parts

-

10k+ parts

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2,096

$0.408

-

-

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Vyrian

USA . 2,454 parts In-Stock

1+ parts

$0.430

100+ parts

-

1k+ parts

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10k+ parts

-

2,454

$0.430

-

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Flip Electronics

USA . 39,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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39,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 2,832 parts In-Stock

1+ parts

$0.300

100+ parts

$0.240

1k+ parts

$0.230

10k+ parts

-

2,832

$0.300

$0.240

$0.230

-

Corphita

USA . 2,155 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

-

10k+ parts

-

2,155

$0.387

-

-

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Corohmni

South Africa . 160 parts In-Stock

1+ parts

$0.420

100+ parts

-

1k+ parts

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10k+ parts

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160

$0.420

-

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QUARKTWIN TECHNOLOGY LTD

USA . 16,515 parts In-Stock

1+ parts

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100+ parts

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16,515

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Kulean Microsystems

USA . 7,788 parts In-Stock

1+ parts

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7,788

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SupplyDigital Components

Austria . 7,508 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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7,508

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TANS Electronics

Latvia . 1,772 parts In-Stock

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1,772

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Problanco Electronics

Mexico . 715 parts In-Stock

1+ parts

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715

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UHIMA Technologies

Türkiye . 213 parts In-Stock

1+ parts

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100+ parts

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213

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Overview

Unlock endless possibilities with the Onsemi NV24C08SNVLT3G EEPROM. Built by a trusted manufacturer, this small outline, thin profile package offers reliable performance in automotive applications. With a maximum operating temperature of 125 °C and an endurance of 1,000,000 write/erase cycles, this EEPROM ensures lasting data retention and seamless operation. Experience the convenience of hardware write protection and synchronous operating mode, making this device a valuable asset for your projects. Stay ahead of the curve with Onsemi's cutting-edge technology and elevate your designs with the NV24C08SNVLT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the EEPROM lightweight and durable for various automotive applications.

Surface Mount: YES

Allows for easy installation and integration on circuit boards.

Screening Level: AEC-Q100

AEC-Q100 compliance ensures high reliability and quality for automotive electronics.

Operating Mode: SYNCHRONOUS

Synchronous operation provides precise control and timing in data storage and retrieval.

Nominal Supply Voltage: 3.3V

Compatible with standard supply voltages in automotive systems.

No. of Terminals: 5

Compact design with minimal number of terminals for efficient connection.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Space-saving design ideal for applications with limited board space.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures common in automotive environments.

Organization: 1KX8

Provides 1K words of memory with 8 bits in each word for data storage.

Minimum Operating Temperature: -40 °C

Suitable for use in cold environments without loss of functionality.

Write Protection: HARDWARE

Enhanced security with hardware-based write protection for data integrity.

Maximum Clock Frequency (fCLK): 1 MHz

Supports fast data transfer rates for efficient operation.

I2C Control Byte: 1010XXXR

Specific I2C control byte for easy interfacing with other devices in the system.

Terminal Position: DUAL

Dual terminal position for flexible installation options on the circuit board.

Maximum Seated Height: 1.1 mm

Low profile design for compact electronic assemblies.

Width: 1.5 mm

Slim width for space-efficient placement on the PCB.

Minimum Supply Voltage (Vsup): 1.7 V

Can operate at low supply voltages for power efficiency.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Length: 3 mm

Compact length for tight PCB layouts.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for reliability and performance in harsh conditions.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation.

Parallel or Serial: SERIAL

Serial data interface for simplified communication with other system components.

Terminal Form: GULL WING

Gull wing terminals for secure soldering and reliable connections.

Maximum Supply Current: 0.5 mA

Low supply current requirement for energy-efficient operation.

No. of Words: 1024 words

Provides ample storage capacity for data logging and program storage.

Memory Width: 8

8-bit memory width for data handling and processing.

Minimum Data Retention Time: 100

Ensures data integrity with long retention time even without power.

Terminal Pitch: 0.95 mm

Compact terminal pitch for high-density mounting on the PCB.

No. of Words Code: 1K

Indicates the number of words of memory storage provided by the EEPROM.

Maximum Supply Voltage (Vsup): 5.5 V

Wide supply voltage range for compatibility with different power sources.

Endurance: 1000000 Write/Erase Cycles

High endurance for frequent data read/write operations without degradation.

Serial Bus Type: I2C

I2C serial bus interface for easy communication with microcontrollers and peripherals.

Maximum Write Cycle Time (tWC): 4 ms

Fast write cycle time for quick data updates and storage.

Memory Density: 8192 bit

High memory density in a compact package for efficient data storage.

Memory IC Type: EEPROM

Specifically designed EEPROM memory for reliable and non-volatile data storage.

Maximum Standby Current: 0.000002 Amp

Ultra-low standby current consumption for energy-efficient operation in standby mode.

Technical Specifications

EEPROM NV24C08SNVLT3G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010XXXR

JESD-30 Code:

R-PDSO-G5

Length:

3 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

5

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.5 mm

Maximum Write Cycle Time (tWC):

4 ms

Write Protection:

HARDWARE

Trade Compliance

NV24C08SNVLT3G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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